Large-yield preparation of high-electronic-quality graphene by a langmuir-schaefer approach

Régis Y N Gengler, Alina Veligura, Apostolos Enotiadis, Evmorfia K. Diamanti, Dimitrios Gournis, Csaba Józsa, Bart J. Van Wees, Petra Rudolf

Research output: Chapter in Book/Report/Conference proceedingChapter

71 Citations (Scopus)

Abstract

Controlled deposition of graphene single layers is demonstrated by use of a Langmuir-Schaefer approach and oxidized graphene as a starting material (see image). The transferred films consist of a 90% single-layer graphene showing typical bipolar behavior and a mobility of 12 cm2 V-1 s-1 in the metallic regime. Very large sheet size (10-150 µm2) and controllable coverage open the way to accessible large-scale deposition.
Original languageEnglish
Title of host publicationSmall
Pages35-39
Number of pages5
DOIs
Publication statusPublished - 04 Jan 2010

Publication series

NameSmall
Volume6

Keywords

  • Electrical properties
  • Graphene
  • Graphene oxide
  • Langmuir-schaefer films
  • Self-assembly

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