Localised nanoscale resistive switching in GaP thin films with low power consumption

Fran Kurnia, Chunli Liu, Guangqing Liu, Rama K. Vasudevan, Sang Mo Yang, Sergei V. Kalinin, Nagarajan Valanoor, Judy N. Hart

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Nanoscale localisation of the electroforming-free resistive switching (RS) behaviour in polycrystalline GaP thin films has been observed for the first time. A combination of conductive atomic force microscopy and first-order reversal curve current–voltage measurements indicated that the grain boundaries are the preferred sites for the formation of the conductive switching filaments. It is proposed, based on TEM and XPS results, that local electrochemical migration of Ga ions along the grain boundaries plays a critical role in the switching mechanism. In the low-resistance (ON) state, the conduction mechanism was found to be the space-charge-limited current mechanism, while the high-resistance (OFF) state was governed by the Frenkel–Poole mechanism. A high OFF/ON resistance ratio (∼104) and lower power consumption than current RS devices, in addition to the easy integration of GaP with silicon substrates, make these GaP films promising for future applications in future non-volatile resistive random access memory (RRAM).
Original languageEnglish
Pages (from-to)2153-2159
Number of pages8
JournalJournal of Materials Chemistry C
Volume5
DOIs
Publication statusPublished - 03 Feb 2017

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Electric power utilization
Thin films
Grain boundaries
Electroforming
Silicon
Electric space charge
Atomic force microscopy
X ray photoelectron spectroscopy
Ions
Transmission electron microscopy
Data storage equipment
Substrates

Cite this

Kurnia, F., Liu, C., Liu, G., Vasudevan, R. K., Yang, S. M., Kalinin, S. V., ... Hart, J. N. (2017). Localised nanoscale resistive switching in GaP thin films with low power consumption. Journal of Materials Chemistry C, 5, 2153-2159. https://doi.org/10.1039/c6tc04895a
Kurnia, Fran ; Liu, Chunli ; Liu, Guangqing ; Vasudevan, Rama K. ; Yang, Sang Mo ; Kalinin, Sergei V. ; Valanoor, Nagarajan ; Hart, Judy N. / Localised nanoscale resistive switching in GaP thin films with low power consumption. In: Journal of Materials Chemistry C. 2017 ; Vol. 5. pp. 2153-2159.
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abstract = "Nanoscale localisation of the electroforming-free resistive switching (RS) behaviour in polycrystalline GaP thin films has been observed for the first time. A combination of conductive atomic force microscopy and first-order reversal curve current–voltage measurements indicated that the grain boundaries are the preferred sites for the formation of the conductive switching filaments. It is proposed, based on TEM and XPS results, that local electrochemical migration of Ga ions along the grain boundaries plays a critical role in the switching mechanism. In the low-resistance (ON) state, the conduction mechanism was found to be the space-charge-limited current mechanism, while the high-resistance (OFF) state was governed by the Frenkel–Poole mechanism. A high OFF/ON resistance ratio (∼104) and lower power consumption than current RS devices, in addition to the easy integration of GaP with silicon substrates, make these GaP films promising for future applications in future non-volatile resistive random access memory (RRAM).",
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Kurnia, F, Liu, C, Liu, G, Vasudevan, RK, Yang, SM, Kalinin, SV, Valanoor, N & Hart, JN 2017, 'Localised nanoscale resistive switching in GaP thin films with low power consumption', Journal of Materials Chemistry C, vol. 5, pp. 2153-2159. https://doi.org/10.1039/c6tc04895a

Localised nanoscale resistive switching in GaP thin films with low power consumption. / Kurnia, Fran; Liu, Chunli; Liu, Guangqing; Vasudevan, Rama K.; Yang, Sang Mo; Kalinin, Sergei V.; Valanoor, Nagarajan; Hart, Judy N.

In: Journal of Materials Chemistry C, Vol. 5, 03.02.2017, p. 2153-2159.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Localised nanoscale resistive switching in GaP thin films with low power consumption

AU - Kurnia, Fran

AU - Liu, Chunli

AU - Liu, Guangqing

AU - Vasudevan, Rama K.

AU - Yang, Sang Mo

AU - Kalinin, Sergei V.

AU - Valanoor, Nagarajan

AU - Hart, Judy N.

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AB - Nanoscale localisation of the electroforming-free resistive switching (RS) behaviour in polycrystalline GaP thin films has been observed for the first time. A combination of conductive atomic force microscopy and first-order reversal curve current–voltage measurements indicated that the grain boundaries are the preferred sites for the formation of the conductive switching filaments. It is proposed, based on TEM and XPS results, that local electrochemical migration of Ga ions along the grain boundaries plays a critical role in the switching mechanism. In the low-resistance (ON) state, the conduction mechanism was found to be the space-charge-limited current mechanism, while the high-resistance (OFF) state was governed by the Frenkel–Poole mechanism. A high OFF/ON resistance ratio (∼104) and lower power consumption than current RS devices, in addition to the easy integration of GaP with silicon substrates, make these GaP films promising for future applications in future non-volatile resistive random access memory (RRAM).

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