Long-range lateral dopant diffusion in tungsten silicide layers

S. Liao, Michael Bain, Paul Baine, David McNeill, Mervyn Armstrong, Harold Gamble

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Novel diode test structures have been manufactured to characterize long-range dopant diffusion in tungsten silicide layers. A tungsten silicide to p-type silicon contact has been characterized as a Schottky barrier rectifying contact with a silicide work function of 4.8 eV. Long-range diffusion of boron for an anneal at 900 °C for 30 min has been shown to alter this contact to become ohmic. Long-range diffusion of phosphorus with a similar anneal alters the contact to become a bipolar n-p diode. Bipolar diode action is demonstrated experimentally for anneal schedules of 30 min at 900 °C, indicating long-range diffusion of phosphorus (~38 µm), SIMS analysis shows dopant redistribution is adversely affected by segregation to the silicide/oxide interface. The concept of conduit diffusion has been demonstrated experimentally for application in advanced bipolar transistor technology.
Original languageEnglish
Pages (from-to)80-87
Number of pages8
JournalIEEE Transactions on Semiconductor Manufacturing
Volume22
Issue number1
DOIs
Publication statusPublished - 03 Feb 2009
EventIEEE International Conference on Microelectronic Test Structures - Univ Edinburgh, Edinburgh, Scotland, United Kingdom
Duration: 01 Mar 200901 Mar 2009

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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