Low temperature epitaxy of Si/Si1-xGex/Si multi-layers by low pressure RTCVD for very thin SOI applications

David McNeill, D.L. Gay, X. Li, Mervyn Armstrong, Harold Gamble

Research output: Contribution to conferencePaper

LanguageEnglish
Pages307-313
Number of pages7
Publication statusPublished - Apr 1998
EventMRS Symposium Proceedings - San Francisco, United States
Duration: 01 Apr 199801 Apr 1998

Conference

ConferenceMRS Symposium Proceedings
CountryUnited States
CitySan Francisco
Period01/04/199801/04/1998

Cite this

McNeill, D., Gay, D. L., Li, X., Armstrong, M., & Gamble, H. (1998). Low temperature epitaxy of Si/Si1-xGex/Si multi-layers by low pressure RTCVD for very thin SOI applications. 307-313. Paper presented at MRS Symposium Proceedings, San Francisco, United States.
McNeill, David ; Gay, D.L. ; Li, X. ; Armstrong, Mervyn ; Gamble, Harold. / Low temperature epitaxy of Si/Si1-xGex/Si multi-layers by low pressure RTCVD for very thin SOI applications. Paper presented at MRS Symposium Proceedings, San Francisco, United States.7 p.
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author = "David McNeill and D.L. Gay and X. Li and Mervyn Armstrong and Harold Gamble",
year = "1998",
month = "4",
language = "English",
pages = "307--313",
note = "MRS Symposium Proceedings ; Conference date: 01-04-1998 Through 01-04-1998",

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McNeill, D, Gay, DL, Li, X, Armstrong, M & Gamble, H 1998, 'Low temperature epitaxy of Si/Si1-xGex/Si multi-layers by low pressure RTCVD for very thin SOI applications' Paper presented at MRS Symposium Proceedings, San Francisco, United States, 01/04/1998 - 01/04/1998, pp. 307-313.

Low temperature epitaxy of Si/Si1-xGex/Si multi-layers by low pressure RTCVD for very thin SOI applications. / McNeill, David; Gay, D.L.; Li, X.; Armstrong, Mervyn; Gamble, Harold.

1998. 307-313 Paper presented at MRS Symposium Proceedings, San Francisco, United States.

Research output: Contribution to conferencePaper

TY - CONF

T1 - Low temperature epitaxy of Si/Si1-xGex/Si multi-layers by low pressure RTCVD for very thin SOI applications

AU - McNeill, David

AU - Gay, D.L.

AU - Li, X.

AU - Armstrong, Mervyn

AU - Gamble, Harold

PY - 1998/4

Y1 - 1998/4

M3 - Paper

SP - 307

EP - 313

ER -

McNeill D, Gay DL, Li X, Armstrong M, Gamble H. Low temperature epitaxy of Si/Si1-xGex/Si multi-layers by low pressure RTCVD for very thin SOI applications. 1998. Paper presented at MRS Symposium Proceedings, San Francisco, United States.