Low temperature epitaxy of Si/Si1-xGex/Si multi-layers by low pressure RTCVD for very thin SOI applications

David McNeill, D.L. Gay, X. Li, Mervyn Armstrong, Harold Gamble

Research output: Contribution to conferencePaper

Original languageEnglish
Pages307-313
Number of pages7
Publication statusPublished - Apr 1998
EventMRS Symposium Proceedings - San Francisco, United States
Duration: 01 Apr 199801 Apr 1998

Conference

ConferenceMRS Symposium Proceedings
CountryUnited States
CitySan Francisco
Period01/04/199801/04/1998

Cite this

McNeill, D., Gay, D. L., Li, X., Armstrong, M., & Gamble, H. (1998). Low temperature epitaxy of Si/Si1-xGex/Si multi-layers by low pressure RTCVD for very thin SOI applications. 307-313. Paper presented at MRS Symposium Proceedings, San Francisco, United States.