Low temperature surface nitridation processes for dielectric-Ge interfaces

H.J. Wadsworth, S. Bhattacharya, F.H. Ruddell, D.W. McNeill, Neil Mitchell, B.M. Armstrong, H.S. Gamble, D. Denvir

Research output: Contribution to journalArticlepeer-review


Germanium MOS capacitors have been fabricated with a high-? HfO dielectric using ALD. An in-situ low temperature (250°C) nitrogen plasma treatment on the germanium surface prior to the deposition of HfO was found to be beneficial to the electrical properties of the devices. Germanium MOS capacitors have also been fabricated with a SiO dielectric deposited by an atmospheric pressure CVD 'silox' process. The same low temperature plasma nitridation was found to degrade the electrical properties of the silox devices. The effect of a post-metal anneal in H and N on both types of capacitor structure was also found to degrade device electrical properties. copyright The Electrochemical Society.
Original languageEnglish
Pages (from-to)531-537
Number of pages7
JournalECS Transactions
Issue number7
Publication statusPublished - 01 Jan 2006
Event210th Electrochemical Society Meeting - Cancun, Mexico
Duration: 01 Jan 200601 Jan 2006

ASJC Scopus subject areas

  • Engineering(all)


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