Abstract
Application of conducting ferroelectric domain walls (DW) as functional elements may facilitate development of conceptually new resistive switching devices. In a conventional approach, several orders of magnitude change in resistance can be achieved by controlling the DWs density using super-coercive voltage. However, a deleterious characteristic of this approach is high-energy cost of polarization reversal due to high leakage current. Here, we demonstrate a new approach based on tuning the conductivity of DWs themselves rather than on domain rearrangement. Using LiNbO3 capacitors with graphene, we show that resistance of a device set to a polydomain state can be continuously tuned by application of sub-coercive voltage. The tuning mechanism is based on the reversible transition between the conducting and insulating states of DWs. The developed approach allows an energy-efficient control of resistance without the need for domain structure modification. The developed memristive devices are promising for multi-level memories and neuromorphic computing applications.
Original language | English |
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Pages (from-to) | 5873–5878 |
Number of pages | 6 |
Journal | Nano Letters |
Volume | 20 |
Issue number | 8 |
DOIs | |
Publication status | Published - 23 Jun 2020 |
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Dive into the research topics of 'Low-Voltage Domain-Wall LiNbO3 Memristors'. Together they form a unique fingerprint.Student theses
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Charged ferroelectric domain walls: The next generation in 2D functional materials
Author: McConville, J., Jul 2021Supervisor: Gregg, J. (Supervisor) & Felton, S. (Supervisor)
Student thesis: Doctoral Thesis › Doctor of Philosophy
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