Low-Voltage Domain-Wall LiNbO3 Memristors

P Chaudhary, Haidong Lu, A Lipatov, Z Ahmadi, James McConville, A Sokolov, J Shield, A Sinitskii, Marty Gregg, Alexei Gruverman*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Application of conducting ferroelectric domain walls (DW) as functional elements may facilitate development of conceptually new resistive switching devices. In a conventional approach, several orders of magnitude change in resistance can be achieved by controlling the DWs density using super-coercive voltage. However, a deleterious characteristic of this approach is high-energy cost of polarization reversal due to high leakage current. Here, we demonstrate a new approach based on tuning the conductivity of DWs themselves rather than on domain rearrangement. Using LiNbO3 capacitors with graphene, we show that resistance of a device set to a polydomain state can be continuously tuned by application of sub-coercive voltage. The tuning mechanism is based on the reversible transition between the conducting and insulating states of DWs. The developed approach allows an energy-efficient control of resistance without the need for domain structure modification. The developed memristive devices are promising for multi-level memories and neuromorphic computing applications.
Original languageEnglish
Pages (from-to)5873–5878
Number of pages6
JournalNano Letters
Volume20
Issue number8
DOIs
Publication statusPublished - 23 Jun 2020

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