LPCVD of tungsten by selective deposition on silicon

F.X. Li, Mervyn Armstrong, Harold Gamble

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Beta-phase W, selectively grown at 440C had resistivity 20 micro-ohm cm and maximum layer thickness 100nm. Hydrogen passivation proved essential in this process. Higher deposition temperatures resulted in increased layer thickness but incorporated WSi2 and alpha- phase W. Self limiting W grown on polycrystalline and heavily doped silicon yielded reduced thickness. Boron is involved in the WF6 reduction reaction but phosphorus is not and becomes incorporated in the W layer. The paper establishes an optimised and novel CVD process suited to IC contact technology. A funded technology transfer contract with National Semiconductor Greenock (M Fallon) resulted from this work.
Original languageEnglish
Pages (from-to)303-306
Number of pages4
JournalJournal of Materials Science: Materials in Electronics
Volume12(4/6)
Issue number4-6
DOIs
Publication statusPublished - Jun 2001

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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