Magnetoelectric effect in functionalized few-layer graphene

Elton J. G. Santos

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

We show that the spin moment induced by sp3-type defects created by different covalent functionalizations on a few-layer graphene structure can be controlled by an external electric field. Based on ab initio density functional calculations, including van der Waals interactions, we find that this effect has a dependence on the number of stacked layers and concentration of point defects, but the interplay of both with the electric field drives the system to a half-metallic state. The calculated magnetoelectric coefficient α has a value comparable to those found for ferromagnetic thin films (e.g., Fe, Co, Ni) and magnetoelectric surfaces (e.g., CrO2). The value of α also agrees with the universal value predicted for ferromagnetic half-metals and also points to a novel route to induce half-metallicity in graphene using surface decoration.
Original languageEnglish
Pages (from-to)155440
JournalPhysical Review B
Volume87
Issue number15
DOIs
Publication statusPublished - 01 Apr 2013
Externally publishedYes

Keywords

  • Magnetomechanical and magnetoelectric effects magnetostriction
  • Surface magnetism
  • Magnetoelectronics
  • spintronics: devices exploiting spin polarized transport or integrated magnetic fields

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