We have investigated the influence of the material properties of the silicon device layer on the generation of defects, and in particular slip dislocations, in trenched and refilled fusion-bonded silicon-on-insulator structures. A strong dependence of the ease of slip generation on the type of dopant species was observed, with the samples falling into three basic categories; heavily boron-doped silicon showed ready slip generation, arsenic and antimony-doped material was fairly resistant to slip, while silicon moderately or lightly doped with phosphorous or boron gave intermediate behavior. The observed behavior appears to be controlled by differences in the dislocation generation mechanism rather than by dislocation mobility. The introduction of an implanted buried layer at the bonding interface was found to result in an increase in slip generation in the silicon, again with a variation according to the dopant species. Here, the greatest slip occurred for both boron and antimony-implanted samples. The weakening of the implanted material may be related to the presence of a band of precipitates observed in the silicon near the bonding interface. (C) 2001 The Electrochemical Society.
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Surfaces and Interfaces
Nevin, W. A., Somasundram, K., McCann, P., Magee, S., & Paxton, A. (2001). Material effects on stress-induced defect generation in trenched silicon-on-insulator structures. Journal of the Electrochemical Society, 148(11), G649-G654. https://doi.org/10.1149/1.1408636