Medium Doped Non-Suspended Silicon Nanowire Piezoresistor using SIMOX substrate

T. H.  Tan; S. J. N. Mitchell; D. W. McNeill; H. Wadsworth; S. Strahan; I. Bailie

doi:10.1109/ICAEES.2016.7888036

Medium Doped Non-Suspended Silicon Nanowire Piezoresistor using SIMOX substrate

T. H. Tan, S. J. N. Mitchell, D. W. McNeill, H. Wadsworth, S. Strahan, I. Bailie

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

308 Downloads (Pure)

Abstract

This paper reports on the enhanced piezoresistive effect in p-type <110> silicon nanowires, fabricated using a top down approach. The silicon nanowire width is varied from 100 to 500nm with thickness of 200 nm and length of 9µm. It is found that the piezoresistive effect increases when the nanowire width is reduced below 350 nm. Compared with micrometre sized piezoresistors, silicon nanowires have produced up to 50% enhancement. Silicon nanowire with cross-section of (100 × 200 nm) with doping concentration of 3.2 × 1018 cm-3 has produced a gauge factor of 150. The extracted gauge factors are compared with other silicon nanowire experimental publications. The enhancement in piezoresistive effect by employing non-suspended silicon nanowire is beneficial for new MEMS pressure sensors with medium doping concentrations.

Original language	English
Title of host publication	International Conference on Advances in Electrical, Electronic and Systems Engineering (ICAEES): Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	189-193
Number of pages	5
ISBN (Electronic)	978-1-5090-2889-4
ISBN (Print)	978-1-5090-2890-0
DOIs	https://doi.org/10.1109/ICAEES.2016.7888036
Publication status	Published - 30 Mar 2017
Event	International Conference on Advances in Electrical, Electronic and Systems Engineering ICAEESE - Putrajaya, Malaysia Duration: 14 Nov 2016 → 16 Nov 2016

Conference

Conference	International Conference on Advances in Electrical, Electronic and Systems Engineering ICAEESE
Country/Territory	Malaysia
City	Putrajaya
Period	14/11/2016 → 16/11/2016

Access to Document

10.1109/ICAEES.2016.7888036Licence: Unspecified

Medium Doped Non-Suspended Silicon Nanowire Piezoresistor using SIMOX substrateAccepted author manuscript, 833 KBLicence: Unspecified

Neil Mitchell
- N.Mitchellqub.acuk
Person: Academic

Cite this

Tan, T. H., Mitchell, S. J. N., McNeill, D. W., Wadsworth, H., Strahan, S., & Bailie, I. (2017). Medium Doped Non-Suspended Silicon Nanowire Piezoresistor using SIMOX substrate. In International Conference on Advances in Electrical, Electronic and Systems Engineering (ICAEES): Proceedings (pp. 189-193). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICAEES.2016.7888036

@inproceedings{6f97950d624241b899dc6cb5a890645a,

title = "Medium Doped Non-Suspended Silicon Nanowire Piezoresistor using SIMOX substrate",

abstract = "This paper reports on the enhanced piezoresistive effect in p-type <110> silicon nanowires, fabricated using a top down approach. The silicon nanowire width is varied from 100 to 500nm with thickness of 200 nm and length of 9µm. It is found that the piezoresistive effect increases when the nanowire width is reduced below 350 nm. Compared with micrometre sized piezoresistors, silicon nanowires have produced up to 50% enhancement. Silicon nanowire with cross-section of (100 × 200 nm) with doping concentration of 3.2 × 1018 cm-3 has produced a gauge factor of 150. The extracted gauge factors are compared with other silicon nanowire experimental publications. The enhancement in piezoresistive effect by employing non-suspended silicon nanowire is beneficial for new MEMS pressure sensors with medium doping concentrations. ",

author = "Tan, {T. H.} and Mitchell, {S. J. N.} and McNeill, {D. W.} and H. Wadsworth and S. Strahan and I. Bailie",

year = "2017",

month = mar,

day = "30",

doi = "10.1109/ICAEES.2016.7888036",

language = "English",

isbn = "978-1-5090-2890-0",

pages = "189--193",

booktitle = "International Conference on Advances in Electrical, Electronic and Systems Engineering (ICAEES): Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "International Conference on Advances in Electrical, Electronic and Systems Engineering ICAEESE ; Conference date: 14-11-2016 Through 16-11-2016",

}

Tan, TH, Mitchell, SJN , McNeill, DW, Wadsworth, H, Strahan, S & Bailie, I 2017, Medium Doped Non-Suspended Silicon Nanowire Piezoresistor using SIMOX substrate. in International Conference on Advances in Electrical, Electronic and Systems Engineering (ICAEES): Proceedings. Institute of Electrical and Electronics Engineers Inc., pp. 189-193, International Conference on Advances in Electrical, Electronic and Systems Engineering ICAEESE, Putrajaya, Malaysia, 14/11/2016. https://doi.org/10.1109/ICAEES.2016.7888036

Medium Doped Non-Suspended Silicon Nanowire Piezoresistor using SIMOX substrate. / Tan, T. H. ; Mitchell, S. J. N.; McNeill, D. W. et al.
International Conference on Advances in Electrical, Electronic and Systems Engineering (ICAEES): Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 189-193.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Medium Doped Non-Suspended Silicon Nanowire Piezoresistor using SIMOX substrate

AU - Tan, T. H.

AU - Mitchell, S. J. N.

AU - McNeill, D. W.

AU - Wadsworth, H.

AU - Strahan, S.

AU - Bailie, I.

PY - 2017/3/30

Y1 - 2017/3/30

N2 - This paper reports on the enhanced piezoresistive effect in p-type <110> silicon nanowires, fabricated using a top down approach. The silicon nanowire width is varied from 100 to 500nm with thickness of 200 nm and length of 9µm. It is found that the piezoresistive effect increases when the nanowire width is reduced below 350 nm. Compared with micrometre sized piezoresistors, silicon nanowires have produced up to 50% enhancement. Silicon nanowire with cross-section of (100 × 200 nm) with doping concentration of 3.2 × 1018 cm-3 has produced a gauge factor of 150. The extracted gauge factors are compared with other silicon nanowire experimental publications. The enhancement in piezoresistive effect by employing non-suspended silicon nanowire is beneficial for new MEMS pressure sensors with medium doping concentrations.

AB - This paper reports on the enhanced piezoresistive effect in p-type <110> silicon nanowires, fabricated using a top down approach. The silicon nanowire width is varied from 100 to 500nm with thickness of 200 nm and length of 9µm. It is found that the piezoresistive effect increases when the nanowire width is reduced below 350 nm. Compared with micrometre sized piezoresistors, silicon nanowires have produced up to 50% enhancement. Silicon nanowire with cross-section of (100 × 200 nm) with doping concentration of 3.2 × 1018 cm-3 has produced a gauge factor of 150. The extracted gauge factors are compared with other silicon nanowire experimental publications. The enhancement in piezoresistive effect by employing non-suspended silicon nanowire is beneficial for new MEMS pressure sensors with medium doping concentrations.

U2 - 10.1109/ICAEES.2016.7888036

DO - 10.1109/ICAEES.2016.7888036

M3 - Conference contribution

SN - 978-1-5090-2890-0

SP - 189

EP - 193

BT - International Conference on Advances in Electrical, Electronic and Systems Engineering (ICAEES): Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Conference on Advances in Electrical, Electronic and Systems Engineering ICAEESE

Y2 - 14 November 2016 through 16 November 2016

ER -

Medium Doped Non-Suspended Silicon Nanowire Piezoresistor using SIMOX substrate

Abstract

Conference

Access to Document

Fingerprint

Profiles

Neil Mitchell

Cite this