Modeling and simulation of bulk gallium nitride power semiconductor devices

G. Sabui*, P. J. Parbrook, M. Arredondo-Arechavala, Z. J. Shen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

33 Citations (Scopus)
803 Downloads (Pure)

Abstract

Bulk gallium nitride (GaN) power semiconductor devices are gaining significant interest in recent years, creating the need for technology computer aided design (TCAD) simulation to accurately model and optimize these devices. This paper comprehensively reviews and compares different GaN physical models and model parameters in the literature, and discusses the appropriate selection of these models and parameters for TCAD simulation. 2-D drift-diffusion semi-classical simulation is carried out for 2.6 kV and 3.7 kV bulk GaN vertical PN diodes. The simulated forward current-voltage and reverse breakdown characteristics are in good agreement with the measurement data even over a wide temperature range.

Original languageEnglish
Article number055006
Number of pages14
JournalAIP Advances
Volume6
Issue number5
DOIs
Publication statusPublished - 03 May 2016

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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