Abstract
Molecular dynamics (MD) simulation was carried out to acquire an in-depth
understanding of the flow behaviour of single crystal silicon during nanometric
cutting on three principal crystallographic planes and at different cutting
temperatures. The key findings were that (i) the substrate material underneath
the cutting tool was observed for the first time to experience a rotational flow
akin to fluids at all the tested temperatures up to 1200 K. (ii) The degree of flow
in terms of vorticity was found higher on the (1 1 1) crystal plane signifying
better machinability on this orientation in accord with the current pool of
knowledge (iii) an increase in the machining temperature reduces the springback
effect and thereby the elastic recovery and (iv) the cutting orientation
and the cutting temperature showed significant dependence on the location of
the stagnation region in the cutting zone of the substrate.
Original language | English |
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Number of pages | 10 |
Journal | Modelling and Simulation in Materials Science and Engineering |
Volume | 24 |
Issue number | 1 |
Early online date | 16 Nov 2015 |
DOIs | |
Publication status | Published - 20 Jan 2016 |
Keywords
- molecular dynamics
- Material flow
- Nanometric cuttingg