Multi-Level Wordline Driver for Low Power SRAMs in Nano-Scale CMOS Technology

Farshad Moradi*, Georgios Panagopoulos, Georgios Karakonstantis, Dag Wisland, Hamid Mahmoodi, Jens Kargaard Madsen, Kaushik Roy

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Abstract

In this paper, a multi-level wordline driver scheme is presented to improve SRAM read and write stability while lowering power consumption during hold operation. The proposed circuit applies a shaped wordline voltage pulse during read mode and a boosted wordline pulse during write mode. During read, the applied shaped pulse is tuned at nominal voltage for short period of time, whereas for the remaining access time, the wordline voltage is reduced to a lower level. This pulse results in improved read noise margin without any degradation in access time which is explained by examining the dynamic and nonlinear behavior of the SRAM cell. Furthermore, during hold mode, the wordline voltage starts from a negative value and reaches zero voltage, resulting in a lower leakage current compared to conventional SRAM. Our simulations using TSMC 65nm process show that the proposed wordline driver results in 2X improvement in static read noise margin while the write margin is improved by 3X. In addition, the total leakage of the proposed SRAM is reduced by 10% while the total power is improved by 12% in the worst case scenario of a single SRAM cell. The total area penalty is 10% for a 128Kb standard SRAM array.

Original languageEnglish
Title of host publication2011 IEEE 29TH INTERNATIONAL CONFERENCE ON COMPUTER DESIGN (ICCD)
Place of PublicationLOS ALAMITOS
PublisherIEEE Computer Society
Pages326-331
Number of pages6
ISBN (Print)978-1-4577-1952-3
Publication statusPublished - 2011
EventIEEE 29th International Conference on Computer Design (ICCD) - Amherst, Morocco
Duration: 09 Oct 201112 Oct 2011

Conference

ConferenceIEEE 29th International Conference on Computer Design (ICCD)
CountryMorocco
Period09/10/201112/10/2011

Keywords

  • STABILITY

Cite this

Moradi, F., Panagopoulos, G., Karakonstantis, G., Wisland, D., Mahmoodi, H., Madsen, J. K., & Roy, K. (2011). Multi-Level Wordline Driver for Low Power SRAMs in Nano-Scale CMOS Technology. In 2011 IEEE 29TH INTERNATIONAL CONFERENCE ON COMPUTER DESIGN (ICCD) (pp. 326-331). IEEE Computer Society.