Multiferroic Iron Oxide Thin Films at Room Temperature

Martí Gich; Ignasi Fina; Alessio Morelli; Florencio Sánchez; Marin Alexe; Jaume Gàzquez; Josep Fontcuberta; Anna Roig

doi:10.1002/adma.201400990

Multiferroic Iron Oxide Thin Films at Room Temperature

Martí Gich, Ignasi Fina, Alessio Morelli, Florencio Sánchez, Marin Alexe, Jaume Gàzquez, Josep Fontcuberta, Anna Roig

School of Mathematics and Physics

Research output: Contribution to journal › Article › peer-review

116 Citations (Scopus)

Abstract

Multiferroic behaviour at room temperature is demonstrated in ε-Fe2O3. The simple composition of this new ferromagnetic ferroelectric oxide and the discovery of a robust path for its thin film growth by using suitable seed layers may boost the exploitation of ε-Fe2O3 in novel devices.

Original language	English
Pages (from-to)	4645-4652
Number of pages	8
Journal	Advanced Materials
Volume	26
Issue number	27
Early online date	15 May 2014
DOIs	https://doi.org/10.1002/adma.201400990
Publication status	Published - 14 Jul 2014

Keywords

mutiferroics, iron oxides, ferroelectrics, ferrimagnets, thin films

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10.1002/adma.201400990

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abstract = "Multiferroic behaviour at room temperature is demonstrated in ε-Fe2O3. The simple composition of this new ferromagnetic ferroelectric oxide and the discovery of a robust path for its thin film growth by using suitable seed layers may boost the exploitation of ε-Fe2O3 in novel devices.",

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AU - Gich, Martí

AU - Fina, Ignasi

AU - Morelli, Alessio

AU - Sánchez, Florencio

AU - Alexe, Marin

AU - Gàzquez, Jaume

AU - Fontcuberta, Josep

AU - Roig, Anna

PY - 2014/7/14

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N2 - Multiferroic behaviour at room temperature is demonstrated in ε-Fe2O3. The simple composition of this new ferromagnetic ferroelectric oxide and the discovery of a robust path for its thin film growth by using suitable seed layers may boost the exploitation of ε-Fe2O3 in novel devices.

AB - Multiferroic behaviour at room temperature is demonstrated in ε-Fe2O3. The simple composition of this new ferromagnetic ferroelectric oxide and the discovery of a robust path for its thin film growth by using suitable seed layers may boost the exploitation of ε-Fe2O3 in novel devices.

KW - mutiferroics, iron oxides, ferroelectrics, ferrimagnets, thin films

U2 - 10.1002/adma.201400990

DO - 10.1002/adma.201400990

M3 - Article

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EP - 4652

JO - Advanced Materials

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SN - 0935-9648

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