Multiple self-aligned iron nanowires by a dual selective chemical vapor deposition process

Daniel C. S. Bien, Michael F. Bain, Yee Hooi Low, Neil S. J. Mitchell, Mervyn B. Armstrong, Harold S. Gamble

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We have demonstrated a self-aligned process to fabricate organized iron nanowires on a planarized surface with wire dimensions down to 50 nm. Polishing was used to expose an alternating silicon silicon dioxide edge and a dual selective metal deposition process produced the nanowires. The initial selective deposition produced a tungsten layer on the exposed polysilicon regions. The discovery that selective chemical vapor deposition of iron from Fe(CO)(5) precursor on dielectric surfaces over tungsten surfaces is the key factor that enables the self-alignment of the iron nanowires. Dimensions of the wires are determined by the thickness of the thermal oxide. (c) 2007 The Electrochemical Society.

Original languageEnglish
Pages (from-to)H251-H253
Number of pages3
JournalElectrochemical and Solid-State Letters
Issue number9
Publication statusPublished - 2007

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

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