Abstract
Based on photoluminescence, Fourier transform infrared spectroscopy, and atomic force microscopy results, a new light emitting model for porous silicon (multiple source quantum well model) is proposed.
Original language | English |
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Pages (from-to) | 1394-1398 |
Number of pages | 5 |
Journal | Journal of the Electrochemical Society |
Volume | 143 |
Issue number | 4 |
Publication status | Published - Apr 1996 |
ASJC Scopus subject areas
- Electrochemistry
- Surfaces, Coatings and Films
- Surfaces and Interfaces