Abstract
The combinatorial frequency generation by the periodic stacks of magnetically biased semiconductor layers has been modelled in a self-consistent problem formulation, taking into account the nonlinear dynamics of carriers. It is shown that magnetic bias not only renders nonreciprocity of the three-wave mixing process but also significantly enhances the nonlinear interactions in the stacks, especially at the frequencies close to the intrinsic magneto-plasma resonances of the constituent layers. The main mechanisms and properties of the combinatorial frequency generation and emission from the stacks are illustrated by the simulation results, and the effects of the individual layer parameters and the structure arrangement on the stack nonlinear and nonreciprocal response are discussed.
Original language | English |
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Pages (from-to) | 319-329 |
Number of pages | 11 |
Journal | Photonics and Nanostructures - Fundamentals and Applications |
Volume | 12 |
Issue number | 4 |
Early online date | 04 Jul 2014 |
DOIs | |
Publication status | Published - Aug 2014 |
Keywords
- Combinatorial frequency generation
- Magnetic field
- Periodic structure
- Semiconductor
- Three-wave interaction
- Weak nonlinearity
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Hardware and Architecture
- Condensed Matter Physics
- Atomic and Molecular Physics, and Optics
- Electronic, Optical and Magnetic Materials