Novel low temperature techniques for growth of ultrathin oxides for strained Si MOS devices

Mervyn Armstrong, Harold Gamble

Research output: Contribution to conferencePaper

Original languageEnglish
Pages429-432
Number of pages4
Publication statusPublished - Dec 2007
EventProc International Conference on Microelectronics pp429-32 - Cairo, Egypt
Duration: 01 Dec 200701 Dec 2007

Conference

ConferenceProc International Conference on Microelectronics pp429-32
CountryEgypt
CityCairo
Period01/12/200701/12/2007

Cite this

Armstrong, M., & Gamble, H. (2007). Novel low temperature techniques for growth of ultrathin oxides for strained Si MOS devices. 429-432. Paper presented at Proc International Conference on Microelectronics pp429-32, Cairo, Egypt.