Novel low temperature techniques for growth of ultrathin oxides for strained Si MOS devices

Research output: Contribution to conference › Paper

Original language	English
Pages	429-432
Number of pages	4
Publication status	Published - Dec 2007
Event	Proc International Conference on Microelectronics pp429-32 - Cairo, Egypt Duration: 01 Dec 2007 → 01 Dec 2007

Conference	Proc International Conference on Microelectronics pp429-32
Country/Territory	Egypt
City	Cairo
Period	01/12/2007 → 01/12/2007

Cite this

@conference{9a2b71a769a647ffaac49ec53b9c7626,

title = "Novel low temperature techniques for growth of ultrathin oxides for strained Si MOS devices",

author = "Mervyn Armstrong and Harold Gamble",

year = "2007",

month = dec,

language = "English",

pages = "429--432",

note = "Proc International Conference on Microelectronics pp429-32 ; Conference date: 01-12-2007 Through 01-12-2007",

}

TY - CONF

T1 - Novel low temperature techniques for growth of ultrathin oxides for strained Si MOS devices

AU - Armstrong, Mervyn

AU - Gamble, Harold

PY - 2007/12

Y1 - 2007/12

UR - http://www.scopus.com/inward/record.url?scp=51849158756&partnerID=8YFLogxK

M3 - Paper

SP - 429

EP - 432

T2 - Proc International Conference on Microelectronics pp429-32

Y2 - 1 December 2007 through 1 December 2007

ER -