Numerical simulation of the charge balance in an EBIT

X. Lu, Hirofumi Watanabe, Frederick Currell

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


The electron beam ions traps (EBITs) are widely used to study highly charged ions (HCIs). In an EBIT, a high energy electron beam collides with atoms and ions to generate HCIs in the trap region. It is important to study the physics in the trap. The atomic processes, such as electron impact ionisation (EI), radiative recombination (RR), dielectronic recombination (DR) and charge exchange (CX), occur in the trap and numerical simulation can give some parameters for design, predict the composition and describe charge state evolution in an EBIT [Phys. Rev. A 43 (199 1) 4861]. We are presently developing a new code, which additionally includes a description of the overlaps between the ion clouds of the various charge-states. It has been written so that it can simulate experiments where various machine parameters (e.g. beam energy and current) can vary throughout the simulation and will be able to use cross- sections either based on scaling laws or derived from atomic structure calculations. An object-oriented method is used in developing the new software, which is an efficient way to organize and write code. (C) 2003 Elsevier Science B.V. All rights reserved.
Original languageEnglish
Pages (from-to)234-238
Number of pages5
JournalNuclear Instruments & Methods in Physics Research - Section B: Beam Interactions with Materials and Atoms
Publication statusPublished - May 2003
Event11th International Conference on the Physics of Highly Charged Ions (HCI 2002) - Caen, France
Duration: 01 Sept 200301 Sept 2003

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces


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