On the optical properties of bismuth oxide thin films prepared by pulsed laser deposition

Alina Visinoiu, L Leontie, M Caraman, G I Rusu

Research output: Contribution to journalArticlepeer-review

130 Citations (Scopus)

Abstract

The optical properties of bismuth oxide films prepared by pulsed laser deposition (PLD), absorption in the photon energy range 2.50-4.30 eV and optical functions (n, k, epsilon(1), and epsilon(2)) in the domain 3.20-6.50 eV, have been investigated. As-prepared films (d = 0.05-1.50 mum) are characterized by a mixture of polycrystalline and amorphous phases. The fundamental absorption edge is described by direct optical band-to-band transitions with energies 2.90 and 3.83 eV The dispersion of the optical functions provided values of 4.40-6.25 eV for electron energies of respective direct transitions. In the spectral range 400-1000 nm, bismuth oxide films show a normal dispersion, which can be interpreted in the frame of a single oscillator model. (C) 2004 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)230
JournalThin Solis Films
Volume473
DOIs
Publication statusPublished - Feb 2005

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