Optical contrast in ion-implanted amorphous silicon carbide nanostructures

Satoshi Takahashi, Paul Dawson, Anatoly Zayats, L. Bischoff, O. Angelov, D. Dimova-Malinovska, Tanya Tsvetkova, P.D. Townsend

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Topographic and optical contrasts formed by Ga+ ion irradiation of thin films of amorphous silicon carbide have been investigated with scanning near-field optical microscopy. The influence of ion-irradiation dose has been studied in a pattern of sub-micrometre stripes. While the film thickness decreases monotonically with ion dose, the optical contrast rapidly increases to a maximum value and then decreases gradually. The results are discussed in terms of the competition between the effects of ion implantation and surface milling by the ion beam. The observed effects are important for uses of amorphous silicon carbide thin films as permanent archives in optical data storage applications.
Original languageEnglish
Pages (from-to)7492-7496
Number of pages5
JournalJournal Of Physics D-applied Physics
Volume40
Issue number23
DOIs
Publication statusPublished - 07 Dec 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Optical contrast in ion-implanted amorphous silicon carbide nanostructures'. Together they form a unique fingerprint.

  • Cite this

    Takahashi, S., Dawson, P., Zayats, A., Bischoff, L., Angelov, O., Dimova-Malinovska, D., Tsvetkova, T., & Townsend, P. D. (2007). Optical contrast in ion-implanted amorphous silicon carbide nanostructures. Journal Of Physics D-applied Physics, 40(23), 7492-7496. https://doi.org/10.1088/0022-3727/40/23/036