Optimisation and scaling of interfacial GeO2 layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO2

S. N. A. Murad, P. T. Baine, D. W. McNeill, Neil Mitchell, B. M. Armstrong, M. Modreanu, G. Hughes, R. K. Chellappan

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Germanium is an attractive channel material for MOSFETs because of its higher mobility than silicon. In this paper, GeO2 has been investigated as an interfacial layer for high-kappa gate stacks on germanium. Thermally grown GeO2 layers have been prepared at 550 degrees C to minimise GeO volatilisation. GeO2 growth has been performed in both pure O-2 ambient and O-2 diluted with N-2. GeO2 thickness has been scaled down to approximately 3 nm. MOS capacitors have been fabricated using different GeO2 thicknesses with a standard high-kappa dielectric on top. Electrical properties and thermal stability have been tested up to at least 350 degrees C. The K value of GeO2 was experimentally determined to be 4.5. Interface state densities (D-it) of less than 10(12) CM-2 eV(-1) have been extracted for all devices using the conductance method.

LanguageEnglish
Pages136-140
Number of pages5
JournalSOLID-STATE ELECTRONICS
Volume78
DOIs
Publication statusPublished - Dec 2012

Cite this

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title = "Optimisation and scaling of interfacial GeO2 layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO2",
abstract = "Germanium is an attractive channel material for MOSFETs because of its higher mobility than silicon. In this paper, GeO2 has been investigated as an interfacial layer for high-kappa gate stacks on germanium. Thermally grown GeO2 layers have been prepared at 550 degrees C to minimise GeO volatilisation. GeO2 growth has been performed in both pure O-2 ambient and O-2 diluted with N-2. GeO2 thickness has been scaled down to approximately 3 nm. MOS capacitors have been fabricated using different GeO2 thicknesses with a standard high-kappa dielectric on top. Electrical properties and thermal stability have been tested up to at least 350 degrees C. The K value of GeO2 was experimentally determined to be 4.5. Interface state densities (D-it) of less than 10(12) CM-2 eV(-1) have been extracted for all devices using the conductance method.",
author = "Murad, {S. N. A.} and Baine, {P. T.} and McNeill, {D. W.} and Neil Mitchell and Armstrong, {B. M.} and M. Modreanu and G. Hughes and Chellappan, {R. K.}",
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doi = "10.1016/j.sse.2012.05.048",
language = "English",
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journal = "Solid State Electronics",
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Optimisation and scaling of interfacial GeO2 layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO2. / Murad, S. N. A.; Baine, P. T.; McNeill, D. W.; Mitchell, Neil; Armstrong, B. M.; Modreanu, M.; Hughes, G.; Chellappan, R. K.

In: SOLID-STATE ELECTRONICS, Vol. 78, 12.2012, p. 136-140.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Optimisation and scaling of interfacial GeO2 layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO2

AU - Murad, S. N. A.

AU - Baine, P. T.

AU - McNeill, D. W.

AU - Mitchell, Neil

AU - Armstrong, B. M.

AU - Modreanu, M.

AU - Hughes, G.

AU - Chellappan, R. K.

PY - 2012/12

Y1 - 2012/12

N2 - Germanium is an attractive channel material for MOSFETs because of its higher mobility than silicon. In this paper, GeO2 has been investigated as an interfacial layer for high-kappa gate stacks on germanium. Thermally grown GeO2 layers have been prepared at 550 degrees C to minimise GeO volatilisation. GeO2 growth has been performed in both pure O-2 ambient and O-2 diluted with N-2. GeO2 thickness has been scaled down to approximately 3 nm. MOS capacitors have been fabricated using different GeO2 thicknesses with a standard high-kappa dielectric on top. Electrical properties and thermal stability have been tested up to at least 350 degrees C. The K value of GeO2 was experimentally determined to be 4.5. Interface state densities (D-it) of less than 10(12) CM-2 eV(-1) have been extracted for all devices using the conductance method.

AB - Germanium is an attractive channel material for MOSFETs because of its higher mobility than silicon. In this paper, GeO2 has been investigated as an interfacial layer for high-kappa gate stacks on germanium. Thermally grown GeO2 layers have been prepared at 550 degrees C to minimise GeO volatilisation. GeO2 growth has been performed in both pure O-2 ambient and O-2 diluted with N-2. GeO2 thickness has been scaled down to approximately 3 nm. MOS capacitors have been fabricated using different GeO2 thicknesses with a standard high-kappa dielectric on top. Electrical properties and thermal stability have been tested up to at least 350 degrees C. The K value of GeO2 was experimentally determined to be 4.5. Interface state densities (D-it) of less than 10(12) CM-2 eV(-1) have been extracted for all devices using the conductance method.

U2 - 10.1016/j.sse.2012.05.048

DO - 10.1016/j.sse.2012.05.048

M3 - Article

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JO - Solid State Electronics

T2 - Solid State Electronics

JF - Solid State Electronics

SN - 0038-1101

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