Optimisation and scaling of interfacial GeO2 layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO2

Shahjahan Murad, David McNeill, Neil Mitchell, Mervyn Armstrong, Mircea Modreanu, G Hughes, R.K. Chellappan

Research output: Contribution to conference › Paper

Original language	English
Number of pages	2
Publication status	Published - Dec 2011
Event	Intl Semiconductor Device Research Symp - College Park, United States Duration: 07 Dec 2011 → 09 Dec 2011

Conference	Intl Semiconductor Device Research Symp
Country/Territory	United States
City	College Park
Period	07/12/2011 → 09/12/2011

Cite this

@conference{e636a87f72364d349bff01a1218b4424,

title = "Optimisation and scaling of interfacial GeO2 layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO2",

author = "Shahjahan Murad and David McNeill and Neil Mitchell and Mervyn Armstrong and Mircea Modreanu and G Hughes and R.K. Chellappan",

year = "2011",

month = dec,

language = "English",

note = "Intl Semiconductor Device Research Symp ; Conference date: 07-12-2011 Through 09-12-2011",

}

TY - CONF

T1 - Optimisation and scaling of interfacial GeO2 layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO2

AU - Murad, Shahjahan

AU - McNeill, David

AU - Mitchell, Neil

AU - Armstrong, Mervyn

AU - Modreanu, Mircea

AU - Hughes, G

AU - Chellappan, R.K.

PY - 2011/12

Y1 - 2011/12

M3 - Paper

T2 - Intl Semiconductor Device Research Symp

Y2 - 7 December 2011 through 9 December 2011

ER -