Optimisation and scaling of interfacial GeO2 layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO2

Shahjahan Murad, David McNeill, Neil Mitchell, Mervyn Armstrong, Mircea Modreanu, G Hughes, R.K. Chellappan

Research output: Contribution to conferencePaper

Original languageEnglish
Number of pages2
Publication statusPublished - Dec 2011
EventIntl Semiconductor Device Research Symp - College Park, United States
Duration: 07 Dec 201109 Dec 2011

Conference

ConferenceIntl Semiconductor Device Research Symp
CountryUnited States
CityCollege Park
Period07/12/201109/12/2011

Cite this

Murad, S., McNeill, D., Mitchell, N., Armstrong, M., Modreanu, M., Hughes, G., & Chellappan, R. K. (2011). Optimisation and scaling of interfacial GeO2 layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO2. Paper presented at Intl Semiconductor Device Research Symp, College Park, United States.