Patterning and switching of nano-size ferroelectric memory cells

Alina Visinoiu, Marin Alexe, Catalin Harnagea, Alain Pignolet, Dietrich Hesse, Ulrich Goesele

Research output: Contribution to journalArticlepeer-review

43 Citations (Scopus)


A "top-down" approach using a-beam lithography and a "bottom-up" one using self-assembly methods were used to fabricate ferroelelectric Pb(Zr,Ti)O-3, SrBi2Ta2O9 and BaTiO3 nanostructures with lateral sizes in the range of 30 nm to 100 nm. Switching of single sub-100 nm cells was achieved and piezoelectric hysteresis loops were recorded using a scanning force microscope working in piezoresponse mode. The piezoelectricity and its hysteresis acquired for 100 nm PZT cells demonstrate that a further decrease in lateral size under 100 nm appears to be possible and that the size effects are not fundamentally limiting on increase density of non-volatile ferroelectric memories in the Gbit range.
Original languageEnglish
Pages (from-to)1175
JournalScripta Materialia
Issue number8-9
Publication statusPublished - May 2001


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