Phase transitions in epitaxial Ba0.5Sr0.5TiO3 thin films

S. Rios, J.F. Scott, A. Lookman, J. McAneney, Robert Bowman, Marty Gregg

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Ba0.5Sr0.5TiO3 (BST) thin-film capacitor structures with various thicknesses, (50-1200 nm) and different strain conditions (on lanthanum strontium cobalt oxide La0.5Sr0.5CoO3 and strontium ruthenate SrRuO3 buffer layers) were made using pulsed laser deposition, and characterized by x-ray diffraction. The out-of-plane lattice parameter was followed as a function of temperature within the 100-300 K temperature interval. The phase sequence (cubic-tetragonal-orthorhombic-rhombohedral) known to exist in the bulk analog is shown to be strongly affected by both the stress conditions imposed by the buffer layer and the thickness of the BST film itself. Thus, no phase transition was found for the in-plane compressed BST films. On the stress-free BST films, on the contrary, more phase transitions were observed. It appeared that the complexity of structural phase transitions increased as the film thickness in this system was reduced.
Original languageEnglish
Article number024107
Pages (from-to)024107-024107
Number of pages1
JournalJournal of Applied Physics
Volume99
Issue number2
DOIs
Publication statusPublished - 15 Jan 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Phase transitions in epitaxial Ba0.5Sr0.5TiO3 thin films'. Together they form a unique fingerprint.

  • Cite this

    Rios, S., Scott, J. F., Lookman, A., McAneney, J., Bowman, R., & Gregg, M. (2006). Phase transitions in epitaxial Ba0.5Sr0.5TiO3 thin films. Journal of Applied Physics, 99(2), 024107-024107. [024107]. https://doi.org/10.1063/1.2159554