Physical modelling of millimetre wave signal reflection from forward biased PIN diodes

R.P. Jackson; Neil Mitchell; Vincent Fusco

doi:10.1016/j.sse.2009.12.009

Physical modelling of millimetre wave signal reflection from forward biased PIN diodes

R.P. Jackson, Neil Mitchell, Vincent Fusco

Research output: Contribution to journal › Article

8 Citations (Scopus)

9 Downloads (Pure)

Abstract

This paper examines the DC power requirements of PIN diodes which, with suitable applied DC bias, have the potential to reflect or to permit transmission of millimetre wave energy through them by the process of inducing a semiconductor plasma layer in the i-region. The study is conducted using device level simulation of SOI and bulk PIN diodes and reflection modelling based on the Drude conduction model. We examined five diode lengths (60–140 µm) and seven diode thicknesses (4–100 µm). Simulation output for the diodes of varying thicknesses was subsequently used in reflection modelling to assess their performance for 100 GHz operation. It is shown that substantially high DC input power is required in order to induce near total reflection in SOI PIN diodes at 100 GHz. Thinner devices consume less DC power, but reflect less incident radiation for given input power. SOI diodes are shown to have improved carrier confinement compared with bulk diodes.

Original language	English
Pages (from-to)	149-152
Number of pages	4
Journal	Solid State Electronics
Volume	54
Issue number	2
DOIs	https://doi.org/10.1016/j.sse.2009.12.009
Publication status	Published - Feb 2010
Event	5th Workshop of the Thematic-Network-on-Silicon-on-Insulator-Technology-Devices-and-Circuits (EUROSOI 2009) - Chalmers Univ Technol, Gothenburg, Sweden Duration: 01 Jan 2010 → 01 Jan 2010

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry
Condensed Matter Physics

Access to Document

10.1016/j.sse.2009.12.009

Link to publication in Scopus

Fingerprint Dive into the research topics of 'Physical modelling of millimetre wave signal reflection from forward biased PIN diodes'. Together they form a unique fingerprint.

Cite this

Jackson, R. P., Mitchell, N., & Fusco, V. (2010). Physical modelling of millimetre wave signal reflection from forward biased PIN diodes. Solid State Electronics, 54(2), 149-152. https://doi.org/10.1016/j.sse.2009.12.009

@article{dd69288c23104bbfb510218f37af1ebb,

title = "Physical modelling of millimetre wave signal reflection from forward biased PIN diodes",

abstract = "This paper examines the DC power requirements of PIN diodes which, with suitable applied DC bias, have the potential to reflect or to permit transmission of millimetre wave energy through them by the process of inducing a semiconductor plasma layer in the i-region. The study is conducted using device level simulation of SOI and bulk PIN diodes and reflection modelling based on the Drude conduction model. We examined five diode lengths (60–140 µm) and seven diode thicknesses (4–100 µm). Simulation output for the diodes of varying thicknesses was subsequently used in reflection modelling to assess their performance for 100 GHz operation. It is shown that substantially high DC input power is required in order to induce near total reflection in SOI PIN diodes at 100 GHz. Thinner devices consume less DC power, but reflect less incident radiation for given input power. SOI diodes are shown to have improved carrier confinement compared with bulk diodes.",

author = "R.P. Jackson and Neil Mitchell and Vincent Fusco",

year = "2010",

month = feb,

doi = "10.1016/j.sse.2009.12.009",

language = "English",

volume = "54",

pages = "149--152",

journal = "Solid State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "2",

note = "5th Workshop of the Thematic-Network-on-Silicon-on-Insulator-Technology-Devices-and-Circuits (EUROSOI 2009) ; Conference date: 01-01-2010 Through 01-01-2010",

}

TY - JOUR

T1 - Physical modelling of millimetre wave signal reflection from forward biased PIN diodes

AU - Jackson, R.P.

AU - Mitchell, Neil

AU - Fusco, Vincent

PY - 2010/2

Y1 - 2010/2

N2 - This paper examines the DC power requirements of PIN diodes which, with suitable applied DC bias, have the potential to reflect or to permit transmission of millimetre wave energy through them by the process of inducing a semiconductor plasma layer in the i-region. The study is conducted using device level simulation of SOI and bulk PIN diodes and reflection modelling based on the Drude conduction model. We examined five diode lengths (60–140 µm) and seven diode thicknesses (4–100 µm). Simulation output for the diodes of varying thicknesses was subsequently used in reflection modelling to assess their performance for 100 GHz operation. It is shown that substantially high DC input power is required in order to induce near total reflection in SOI PIN diodes at 100 GHz. Thinner devices consume less DC power, but reflect less incident radiation for given input power. SOI diodes are shown to have improved carrier confinement compared with bulk diodes.

AB - This paper examines the DC power requirements of PIN diodes which, with suitable applied DC bias, have the potential to reflect or to permit transmission of millimetre wave energy through them by the process of inducing a semiconductor plasma layer in the i-region. The study is conducted using device level simulation of SOI and bulk PIN diodes and reflection modelling based on the Drude conduction model. We examined five diode lengths (60–140 µm) and seven diode thicknesses (4–100 µm). Simulation output for the diodes of varying thicknesses was subsequently used in reflection modelling to assess their performance for 100 GHz operation. It is shown that substantially high DC input power is required in order to induce near total reflection in SOI PIN diodes at 100 GHz. Thinner devices consume less DC power, but reflect less incident radiation for given input power. SOI diodes are shown to have improved carrier confinement compared with bulk diodes.

UR - http://www.scopus.com/inward/record.url?scp=76349099583&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2009.12.009

DO - 10.1016/j.sse.2009.12.009

M3 - Article

VL - 54

SP - 149

EP - 152

JO - Solid State Electronics

JF - Solid State Electronics

SN - 0038-1101

IS - 2

T2 - 5th Workshop of the Thematic-Network-on-Silicon-on-Insulator-Technology-Devices-and-Circuits (EUROSOI 2009)

Y2 - 1 January 2010 through 1 January 2010

ER -