Polycrystalline silicon film growth in a SiF4/SiH4/H2 plasma

B. Lee; L.J. Quinn; P.T. Baine; S.J.N. Mitchell; B.M. Armstrong; H.S. Gamble

Polycrystalline silicon film growth in a SiF4/SiH4/H2 plasma

B. Lee, L.J. Quinn, P.T. Baine, S.J.N. Mitchell, B.M. Armstrong, H.S. Gamble

Research output: Contribution to journal › Article › peer-review

Abstract

The growth of polycrystalline silicon (polysilicon) films from SiF4/SiH4/H2 gas mixtures is reported. The polysilicon films have been deposited in a multi process reactor by a PECVD process. The effect of r.f. power, chamber temperature and gas flow ratios on grain size and deposition rate have been determined. The fluorine concentration and the grain sizes of the films have been determined by SIMS and atomic force microscopy (AFM), respectively. Grain sizes in excess of 900 A are reported for layers deposited at 300°C.

Original language	English
Pages (from-to)	55-58
Number of pages	4
Journal	Thin Solid Films
Volume	337
Issue number	1-2
Publication status	Published - 11 Jan 1999

Cite this

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title = "Polycrystalline silicon film growth in a SiF4/SiH4/H2 plasma",

abstract = "The growth of polycrystalline silicon (polysilicon) films from SiF4/SiH4/H2 gas mixtures is reported. The polysilicon films have been deposited in a multi process reactor by a PECVD process. The effect of r.f. power, chamber temperature and gas flow ratios on grain size and deposition rate have been determined. The fluorine concentration and the grain sizes of the films have been determined by SIMS and atomic force microscopy (AFM), respectively. Grain sizes in excess of 900 A are reported for layers deposited at 300°C.",

author = "B. Lee and L.J. Quinn and P.T. Baine and S.J.N. Mitchell and B.M. Armstrong and H.S. Gamble",

year = "1999",

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day = "11",

language = "English",

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T1 - Polycrystalline silicon film growth in a SiF4/SiH4/H2 plasma

AU - Lee, B.

AU - Quinn, L.J.

AU - Baine, P.T.

AU - Mitchell, S.J.N.

AU - Armstrong, B.M.

AU - Gamble, H.S.

PY - 1999/1/11

Y1 - 1999/1/11

N2 - The growth of polycrystalline silicon (polysilicon) films from SiF4/SiH4/H2 gas mixtures is reported. The polysilicon films have been deposited in a multi process reactor by a PECVD process. The effect of r.f. power, chamber temperature and gas flow ratios on grain size and deposition rate have been determined. The fluorine concentration and the grain sizes of the films have been determined by SIMS and atomic force microscopy (AFM), respectively. Grain sizes in excess of 900 A are reported for layers deposited at 300°C.

AB - The growth of polycrystalline silicon (polysilicon) films from SiF4/SiH4/H2 gas mixtures is reported. The polysilicon films have been deposited in a multi process reactor by a PECVD process. The effect of r.f. power, chamber temperature and gas flow ratios on grain size and deposition rate have been determined. The fluorine concentration and the grain sizes of the films have been determined by SIMS and atomic force microscopy (AFM), respectively. Grain sizes in excess of 900 A are reported for layers deposited at 300°C.

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M3 - Article

AN - SCOPUS:0004300232

VL - 337

SP - 55

EP - 58

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -

Polycrystalline silicon film growth in a SiF4/SiH4/H2 plasma

Abstract

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