Possible phonon-induced electronic bi-stability in VO2 for ultrafast memory at room temperature

Yong Tan, Hang Zhao, Liangliang Zhangyan Yan, Liangliang Zhang, Yan Zhang, Cedric Weber, Swagata Acharya, Brian Cunningham, Myrta Gruning, Kai Liu, Mark Van Schilfgaarde, Mostafa Shalaby

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

VO2 is a model material system which exhibits a metal to insulator transition at T = 67°C thus holds potential for future ultrafast storage. There is a controversy on whether the IMT in VO2 is purely electronic, or is driven by lattice distortions. However, the purely electronic process is more meaningful in ultrafast switching. We found a new electron-phonon pathway for a purely reversible electronic transition in a true bi-stable fashion under specific conditions. This finding will prompt the design of future ultrafast electro-resistive non-volatile memory devices.

Original languageEnglish
Title of host publicationIRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves: Proceedings
PublisherIEEE Computer Society
ISBN (Electronic)9781538682852
DOIs
Publication statusPublished - 21 Oct 2019
Event44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019 - Paris, France
Duration: 01 Sep 201906 Sep 2019

Publication series

NameInternational Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
Volume2019-September
ISSN (Print)2162-2027
ISSN (Electronic)2162-2035

Conference

Conference44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019
CountryFrance
CityParis
Period01/09/201906/09/2019

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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