Possible phonon-induced electronic bi-stability in VO2 for ultrafast memory at room temperature

Yong Tan; Hang Zhao; Liangliang Zhangyan Yan; Liangliang Zhang; Yan Zhang; Cedric Weber; Swagata Acharya; Brian Cunningham; Myrta Gruning; Kai Liu; Mark Van Schilfgaarde; Mostafa Shalaby

doi:10.1109/IRMMW-THz.2019.8874246

Possible phonon-induced electronic bi-stability in VO₂ for ultrafast memory at room temperature

Yong Tan, Hang Zhao, Liangliang Zhangyan Yan, Liangliang Zhang, Yan Zhang, Cedric Weber, Swagata Acharya, Brian Cunningham, Myrta Gruning, Kai Liu, Mark Van Schilfgaarde, Mostafa Shalaby

School of Mathematics and Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

VO₂ is a model material system which exhibits a metal to insulator transition at T = 67°C thus holds potential for future ultrafast storage. There is a controversy on whether the IMT in VO₂ is purely electronic, or is driven by lattice distortions. However, the purely electronic process is more meaningful in ultrafast switching. We found a new electron-phonon pathway for a purely reversible electronic transition in a true bi-stable fashion under specific conditions. This finding will prompt the design of future ultrafast electro-resistive non-volatile memory devices.

Original language	English
Title of host publication	IRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves: Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538682852
DOIs	https://doi.org/10.1109/IRMMW-THz.2019.8874246
Publication status	Published - 21 Oct 2019
Event	44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019 - Paris, France Duration: 01 Sept 2019 → 06 Sept 2019

Publication series

Name	International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
Volume	2019-September
ISSN (Print)	2162-2027
ISSN (Electronic)	2162-2035

Conference

Conference	44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019
Country/Territory	France
City	Paris
Period	01/09/2019 → 06/09/2019

ASJC Scopus subject areas

Energy Engineering and Power Technology
Electrical and Electronic Engineering

Access to Document

10.1109/IRMMW-THz.2019.8874246Licence: Unspecified

Cite this

Tan, Y., Zhao, H., Yan, L. Z., Zhang, L., Zhang, Y., Weber, C., Acharya, S., Cunningham, B., Gruning, M., Liu, K., Schilfgaarde, M. V., & Shalaby, M. (2019). Possible phonon-induced electronic bi-stability in VO₂ for ultrafast memory at room temperature. In IRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves: Proceedings Article 8874246 (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz; Vol. 2019-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRMMW-THz.2019.8874246

Tan, Yong ; Zhao, Hang ; Yan, Liangliang Zhangyan et al. / Possible phonon-induced electronic bi-stability in VO₂ for ultrafast memory at room temperature. IRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves: Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz).

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title = "Possible phonon-induced electronic bi-stability in VO2 for ultrafast memory at room temperature",

abstract = "VO2 is a model material system which exhibits a metal to insulator transition at T = 67°C thus holds potential for future ultrafast storage. There is a controversy on whether the IMT in VO2 is purely electronic, or is driven by lattice distortions. However, the purely electronic process is more meaningful in ultrafast switching. We found a new electron-phonon pathway for a purely reversible electronic transition in a true bi-stable fashion under specific conditions. This finding will prompt the design of future ultrafast electro-resistive non-volatile memory devices.",

author = "Yong Tan and Hang Zhao and Yan, {Liangliang Zhangyan} and Liangliang Zhang and Yan Zhang and Cedric Weber and Swagata Acharya and Brian Cunningham and Myrta Gruning and Kai Liu and Schilfgaarde, {Mark Van} and Mostafa Shalaby",

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Tan, Y, Zhao, H, Yan, LZ, Zhang, L, Zhang, Y, Weber, C, Acharya, S, Cunningham, B, Gruning, M, Liu, K, Schilfgaarde, MV & Shalaby, M 2019, Possible phonon-induced electronic bi-stability in VO₂ for ultrafast memory at room temperature. in IRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves: Proceedings., 8874246, International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, vol. 2019-September, Institute of Electrical and Electronics Engineers Inc., 44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019, Paris, France, 01/09/2019. https://doi.org/10.1109/IRMMW-THz.2019.8874246

Possible phonon-induced electronic bi-stability in VO₂ for ultrafast memory at room temperature. / Tan, Yong; Zhao, Hang; Yan, Liangliang Zhangyan et al.
IRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves: Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8874246 (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz; Vol. 2019-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Tan, Yong

AU - Zhao, Hang

AU - Yan, Liangliang Zhangyan

AU - Zhang, Liangliang

AU - Zhang, Yan

AU - Weber, Cedric

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AU - Schilfgaarde, Mark Van

AU - Shalaby, Mostafa

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AB - VO2 is a model material system which exhibits a metal to insulator transition at T = 67°C thus holds potential for future ultrafast storage. There is a controversy on whether the IMT in VO2 is purely electronic, or is driven by lattice distortions. However, the purely electronic process is more meaningful in ultrafast switching. We found a new electron-phonon pathway for a purely reversible electronic transition in a true bi-stable fashion under specific conditions. This finding will prompt the design of future ultrafast electro-resistive non-volatile memory devices.

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BT - IRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves: Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

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Tan Y, Zhao H, Yan LZ, Zhang L, Zhang Y, Weber C et al. Possible phonon-induced electronic bi-stability in VO₂ for ultrafast memory at room temperature. In IRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves: Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8874246. (International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz). doi: 10.1109/IRMMW-THz.2019.8874246