| Original language | English |
|---|---|
| Patent number | US 6,853,033 |
| Publication status | Published - Feb 2005 |
Power MOSFET Having Enhanced Breakdown Voltage (US patent, US 6,853,033)
Yung C. Liang (Inventor), Ganesh S. Samudra (Inventor), K.P. Gan (Inventor), Xin Yang (Inventor)
Research output: Patent