Original language | English |
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Patent number | US 6,853,033 |
Publication status | Published - Feb 2005 |
Power MOSFET Having Enhanced Breakdown Voltage (US patent, US 6,853,033)
Yung C. Liang (Inventor), Ganesh S. Samudra (Inventor), K.P. Gan (Inventor), Xin Yang (Inventor)
Research output: Patent