Power MOSFET Having Enhanced Breakdown Voltage (US patent, US 6,853,033)

Yung C. Liang (Inventor), Ganesh S. Samudra (Inventor), K.P. Gan (Inventor), Xin Yang (Inventor)

Research output: Patent

Original languageEnglish
Patent numberUS 6,853,033
Publication statusPublished - Feb 2005

Cite this