TY - JOUR
T1 - Preparation of Cytocompatible ITO Neuroelectrodes with Enhanced Electrochemical Characteristics Using a Facile Anodic Oxidation Process
AU - Vallejo-Giraldo, Catalina
AU - Pampaloni, Niccolò Paolo
AU - Pallipurath, Anuradha R.
AU - Mokarian-Tabari, Parvaneh
AU - O'Connell, John
AU - Holmes, Justin D.
AU - Trotier, Alexandre
AU - Krukiewicz, Katarzyna
AU - Orpella-Aceret, Gemma
AU - Pugliese, Eugenia
AU - Ballerini, Laura
AU - Kilcoyne, Michelle
AU - Dowd, Eilís
AU - Quinlan, Leo R.
AU - Pandit, Abhay
AU - Kavanagh, Paul
AU - Biggs, Manus Jonathan Paul
PY - 2017/3/23
Y1 - 2017/3/23
N2 - Physicochemical modification of implantable electrode systems is recognized as a viable strategy to enhance tissue/electrode integration and electrode performance in situ. In this work, a bench-top electrochemical process to formulate anodized indium tin oxide (ITO) films with altered roughness, conducting profiles, and thickness is explored. In addition, the influence of these anodized films on neural cell adhesion, proliferation, and function indicates that anodized ITO film cytocompatibility can be altered by varying the anodization current density. Furthermore, ITO-anodized films formed with a current density of 0.4 mA cm-2 show important primary neural cell survival, modulation of glial scar formation, and promotion of neural network activity.
AB - Physicochemical modification of implantable electrode systems is recognized as a viable strategy to enhance tissue/electrode integration and electrode performance in situ. In this work, a bench-top electrochemical process to formulate anodized indium tin oxide (ITO) films with altered roughness, conducting profiles, and thickness is explored. In addition, the influence of these anodized films on neural cell adhesion, proliferation, and function indicates that anodized ITO film cytocompatibility can be altered by varying the anodization current density. Furthermore, ITO-anodized films formed with a current density of 0.4 mA cm-2 show important primary neural cell survival, modulation of glial scar formation, and promotion of neural network activity.
KW - Cytocompatibility
KW - Electrodes
KW - Functionalization
KW - Indium tin oxide
KW - Neural interfaces
UR - http://www.scopus.com/inward/record.url?scp=85016082366&partnerID=8YFLogxK
U2 - 10.1002/adfm.201605035
DO - 10.1002/adfm.201605035
M3 - Article
AN - SCOPUS:85016082366
SN - 1616-301X
VL - 28
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 12
M1 - 1605035
ER -
