TY - JOUR
T1 - Process-variation resilient and voltage-scalable dct architecture for robust low-power computing
AU - Karakonstantis, G.
AU - Banerjee, N.
AU - Roy, K.
PY - 2010/10/1
Y1 - 2010/10/1
N2 - In this paper, we present a novel discrete cosine transform (DCT) architecture that allows aggressive voltage scaling for low-power dissipation, even under process parameter variations with minimal overhead as opposed to existing techniques. Under a scaled supply voltage and/or variations in process parameters, any possible delay errors appear only from the long paths that are designed to be less contributive to output quality. The proposed architecture allows a graceful degradation in the peak SNR (PSNR) under aggressive voltage scaling as well as extreme process variations. Results show that even under large process variations (±3σ around mean threshold voltage) and aggressive supply voltage scaling (at 0.88 V, while the nominal voltage is 1.2 V for a 90-nm technology), there is a gradual degradation of image quality with considerable power savings (71% at PSNR of 23.4 dB) for the proposed architecture, when compared to existing implementations in a 90-nm process technology.
AB - In this paper, we present a novel discrete cosine transform (DCT) architecture that allows aggressive voltage scaling for low-power dissipation, even under process parameter variations with minimal overhead as opposed to existing techniques. Under a scaled supply voltage and/or variations in process parameters, any possible delay errors appear only from the long paths that are designed to be less contributive to output quality. The proposed architecture allows a graceful degradation in the peak SNR (PSNR) under aggressive voltage scaling as well as extreme process variations. Results show that even under large process variations (±3σ around mean threshold voltage) and aggressive supply voltage scaling (at 0.88 V, while the nominal voltage is 1.2 V for a 90-nm technology), there is a gradual degradation of image quality with considerable power savings (71% at PSNR of 23.4 dB) for the proposed architecture, when compared to existing implementations in a 90-nm process technology.
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-77957570471&partnerID=8YFLogxK
U2 - 10.1109/TVLSI.2009.2025279
DO - 10.1109/TVLSI.2009.2025279
M3 - Article
AN - SCOPUS:77957570471
SN - 1063-8210
VL - 18
SP - 1461
EP - 1470
JO - IEEE Transactions on Very Large Scale Integration (VLSI) Systems
JF - IEEE Transactions on Very Large Scale Integration (VLSI) Systems
IS - 10
ER -