Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD

Vitaly Zubialevich, Mathew McLaren, Pietro Pampili, John Shen, Miryam Arredondo-Arechavala, Peter J. Parbrook

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Abstract

Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their successive lateral shrinkage by anisotropic wet etch and lateral overgrowth by MOCVD is studied by transmission electron microscopy (TEM). The fabrication process involves a combination of dry and wet etches to produce nanocolumn arrays of low fill factor (<5%) which are then annealed and laterally overgrown to increase the array fill factor to around 20-30%. The resulting NC arrays show a reduction in treading dislocation density of at least 25 times, allowing for the reduction in material volume due to the array fill factor, with dislocations being observed to bend into the voids between NCs during the overgrowth process.
Original languageEnglish
Article number025306
Number of pages7
JournalJournal of Applied Physics
Volume127
Issue number2
DOIs
Publication statusPublished - 14 Jan 2020

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metalorganic chemical vapor deposition
shrinkage
voids
transmission electron microscopy
fabrication

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Zubialevich, Vitaly ; McLaren, Mathew ; Pampili, Pietro ; Shen, John ; Arredondo-Arechavala, Miryam ; Parbrook, Peter J. / Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD. In: Journal of Applied Physics. 2020 ; Vol. 127, No. 2.
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Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD. / Zubialevich, Vitaly; McLaren, Mathew; Pampili, Pietro; Shen, John; Arredondo-Arechavala, Miryam; Parbrook, Peter J.

In: Journal of Applied Physics, Vol. 127, No. 2, 025306, 14.01.2020.

Research output: Contribution to journalArticle

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