Shear instability of nanocrystalline silicon carbide during nanometric cutting

Saurav Goel, Xichun Luo, Robert L Reuben

Research output: Contribution to journalArticlepeer-review

51 Citations (Scopus)


The shear instability of the nanoscrystalline 3C-SiC during nanometric cutting at a cutting speed of 100?m/s has been investigated using molecular dynamics simulation. The deviatoric stress in the cutting zone was found to cause sp3-sp2 disorder resulting in the local formation of SiC-graphene and Herzfeld-Mott transitions of 3C-SiC at much lower transition pressures than that required under pure compression. Besides explaining the ductility of SiC at 1500?K, this is a promising phenomenon in general nanoscale engineering of SiC. It shows that modifying the tetrahedral bonding of 3C-SiC, which would otherwise require sophisticated pressure cells, can be achieved more easily by introducing non-hydrostatic stress conditions.
Original languageEnglish
Article number231902
Pages (from-to)231902-07
Number of pages5
JournalApplied Physics Letters
Issue number23
Publication statusPublished - 04 Jun 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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