Shear instability of nanocrystalline silicon carbide during nanometric cutting

Saurav Goel, Xichun Luo, Robert L Reuben

Research output: Contribution to journalArticle

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Abstract

The shear instability of the nanoscrystalline 3C-SiC during nanometric cutting at a cutting speed of 100?m/s has been investigated using molecular dynamics simulation. The deviatoric stress in the cutting zone was found to cause sp3-sp2 disorder resulting in the local formation of SiC-graphene and Herzfeld-Mott transitions of 3C-SiC at much lower transition pressures than that required under pure compression. Besides explaining the ductility of SiC at 1500?K, this is a promising phenomenon in general nanoscale engineering of SiC. It shows that modifying the tetrahedral bonding of 3C-SiC, which would otherwise require sophisticated pressure cells, can be achieved more easily by introducing non-hydrostatic stress conditions.
Original languageEnglish
Article number231902
Pages (from-to)231902-07
Number of pages5
JournalApplied Physics Letters
Volume100
Issue number23
DOIs
Publication statusPublished - 04 Jun 2012

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silicon carbides
shear
transition pressure
ductility
graphene
low pressure
engineering
disorders
molecular dynamics
causes
cells
simulation

Cite this

Goel, Saurav ; Luo, Xichun ; Reuben, Robert L. / Shear instability of nanocrystalline silicon carbide during nanometric cutting. In: Applied Physics Letters. 2012 ; Vol. 100, No. 23. pp. 231902-07.
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Shear instability of nanocrystalline silicon carbide during nanometric cutting. / Goel, Saurav; Luo, Xichun; Reuben, Robert L.

In: Applied Physics Letters, Vol. 100, No. 23, 231902, 04.06.2012, p. 231902-07.

Research output: Contribution to journalArticle

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