SiGe HBTs on Bonded SOI Incorporating Buried Silicide Layers

Michael Bain, H.A.W. El Mubarek, J.M. Bonar, Yi Wang, O. Buiu, Harold Gamble, Mervyn Armstrong, P.L.F. Hemment, S. Hall, P. Ashburn

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


The performance of silicon bipolar transistors has been significantly improved by the use of ultra narrow base layers of SiGe. To further improve device performance by minimising parasitic resistance and capacitance the authors produced an unique silicon-on-insulator (SOI) substrate incorporating a buried tungsten disilicide layer. This structure forms the basis of a recent submission by Zarlink Semiconductors ( Silvaco, DeMontfort & Queen�s) to DTI for high voltage devices for automotive applications. The Queen�s part of the original EPSRC project was rated as tending to outstanding.
Original languageEnglish
Pages (from-to)317-324
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume52 (3)
Issue number3
Publication statusPublished - Mar 2005

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'SiGe HBTs on Bonded SOI Incorporating Buried Silicide Layers'. Together they form a unique fingerprint.

Cite this