SiGe Heterojunction Bipolar Transistors on Bonded SOI Incorporating Buried Silicide Layers

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	317-324
Number of pages	8
Journal	IEEE Transactions on Energy Conversion
Volume	52(3)
Publication status	Published - Mar 2005

Cite this

@article{e19f4ec541a24799a2db63e12af9082a,

title = "SiGe Heterojunction Bipolar Transistors on Bonded SOI Incorporating Buried Silicide Layers",

author = "Mervyn Armstrong and Michael Bain and Harold Gamble",

year = "2005",

month = mar,

language = "English",

volume = "52(3)",

pages = "317--324",

journal = "IEEE Transactions on Energy Conversion",

issn = "0885-8969",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}