Simulation Study of High Voltage Vertical GaN Nanowire Field Effect Transistors

Gourab Sabui, Vitaly Z. Zubialevich, Pietro Pampili, Mary White, Peter J. Parbrook, Mathew McLaren, Miryam Arredondo-Arechavala, Z. John Shen

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Concept of vertical Gallium Nitride (GaN) nanowire field effect transistors (NWFETs) for high voltage power electronic applications is investigated through three dimensional (3D) TCAD simulations in this paper. The proposed GaN NWFET can operate either in a normally-off or a normally-on mode depending on the specific device design. A gate-all-around (GAA) structure coupled with a strong dielectric REduced SURface Field (RESURF) effect has the potential to offer blocking voltages over 900 V with very low specific on-resistance for the NWFETs. VRB 2/RON and QGD x RDS(ON) Figures of Merits (FoMs) of the NWFET are extracted and compared with other state of the art GaN, SiC and Si field effect transistors to get a comparative understanding of the potential of the NW architecture for high voltage applications.

Original languageEnglish
Pages (from-to)69-85
Number of pages17
JournalECS Transactions
Volume80
Issue number7
DOIs
Publication statusPublished - 01 Aug 2017
EventGallium Nitride and Silicon Carbide Power Technologies 7 - 232nd ECS Meeting - National Harbor, United States
Duration: 01 Oct 201705 Oct 2017

ASJC Scopus subject areas

  • Engineering(all)

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