Strain as a global factor in stabilizing the ferroelectric properties of ZrO 2

Bohan Xu*, Patrick D. Lomenzo, Alfred Kersch, Tony Schenk, Claudia Richter, Chris M. Fancher, Sergej Starschich, Fenja Berg, Peter Reinig, Kristina M. Holsgrove, Takanori Kiguchi, Thomas Mikolajick, Ulrich Boettger, Uwe Schroeder*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Abstract

Since the discovery of ferroelectricity in doped HfO2 and ZrO2 thin films over a decade ago, fluorite‐structured ferroelectric thin films have attracted much research attention due to their excellent scalability and complementary metal‐oxide semiconductor compatibility compared to conventional perovskite ferroelectric materials. Although various factors influencing the formation of the ferroelectric properties are identified, a clear understanding of the causes of the phase formation have been difficult to determine. In this work, ZrO2 films deposited by atomic layer deposition and chemical solution deposition have resulted in films with completely different structural properties. Regardless of these differences, a general relationship between strain and phase formation is established, leading to a more unified understanding of ferroelectric phase formation in undoped ZrO2 films, which can be applied to other fluorite‐structured films.
Original languageEnglish
Number of pages11
JournalAdvanced Functional Materials
Early online date10 Nov 2023
DOIs
Publication statusEarly online date - 10 Nov 2023

Keywords

  • ferroelectricity
  • strain
  • zirconia
  • stress
  • thin film

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