Stress induced by CoSi2 grown on polycrystalline Si measured by micro-Raman spectroscopy

Bibo Li; Fumin Huang; Shulin Zhang; Yuzhi Gao; Lichun Zhang

Stress induced by CoSi₂ grown on polycrystalline Si measured by micro-Raman spectroscopy

Bibo Li^*, Fumin Huang, Shulin Zhang, Yuzhi Gao, Lichun Zhang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The stress in polycrystalline silicon due to CoSi₂ in the scale of μm in integrated circuit by micro-Raman spectroscopy has been studied. The results show that the stress induced by CoSi₂ grown on the polycrystalline Si is compressive stress. Relations between the magnitude of the stress and the area of the CoSi₂ films are studied. And it is found that smaller dimension of CoSi₂ film causes larger stress, and the stress on the boundary of the CoSi₂ patterns has contrary type to those at the center of the patterns and has twice absolute magnitude of that at the center of the patterns.

Original language	English
Pages (from-to)	299-303
Number of pages	5
Journal	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume	19
Issue number	4
Publication status	Published - 01 Dec 1998
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Stress induced by CoSi2 grown on polycrystalline Si measured by micro-Raman spectroscopy",

abstract = "The stress in polycrystalline silicon due to CoSi2 in the scale of μm in integrated circuit by micro-Raman spectroscopy has been studied. The results show that the stress induced by CoSi2 grown on the polycrystalline Si is compressive stress. Relations between the magnitude of the stress and the area of the CoSi2 films are studied. And it is found that smaller dimension of CoSi2 film causes larger stress, and the stress on the boundary of the CoSi2 patterns has contrary type to those at the center of the patterns and has twice absolute magnitude of that at the center of the patterns.",

author = "Bibo Li and Fumin Huang and Shulin Zhang and Yuzhi Gao and Lichun Zhang",

year = "1998",

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day = "1",

language = "English",

volume = "19",

pages = "299--303",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

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TY - JOUR

T1 - Stress induced by CoSi2 grown on polycrystalline Si measured by micro-Raman spectroscopy

AU - Li, Bibo

AU - Huang, Fumin

AU - Zhang, Shulin

AU - Gao, Yuzhi

AU - Zhang, Lichun

PY - 1998/12/1

Y1 - 1998/12/1

N2 - The stress in polycrystalline silicon due to CoSi2 in the scale of μm in integrated circuit by micro-Raman spectroscopy has been studied. The results show that the stress induced by CoSi2 grown on the polycrystalline Si is compressive stress. Relations between the magnitude of the stress and the area of the CoSi2 films are studied. And it is found that smaller dimension of CoSi2 film causes larger stress, and the stress on the boundary of the CoSi2 patterns has contrary type to those at the center of the patterns and has twice absolute magnitude of that at the center of the patterns.

AB - The stress in polycrystalline silicon due to CoSi2 in the scale of μm in integrated circuit by micro-Raman spectroscopy has been studied. The results show that the stress induced by CoSi2 grown on the polycrystalline Si is compressive stress. Relations between the magnitude of the stress and the area of the CoSi2 films are studied. And it is found that smaller dimension of CoSi2 film causes larger stress, and the stress on the boundary of the CoSi2 patterns has contrary type to those at the center of the patterns and has twice absolute magnitude of that at the center of the patterns.

UR - http://www.scopus.com/inward/record.url?scp=0032280827&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032280827

VL - 19

SP - 299

EP - 303

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

SN - 0253-4177

IS - 4

ER -