Stress induced by CoSi2 grown on polycrystalline Si measured by micro-Raman spectroscopy

Bibo Li*, Fumin Huang, Shulin Zhang, Yuzhi Gao, Lichun Zhang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The stress in polycrystalline silicon due to CoSi2 in the scale of μm in integrated circuit by micro-Raman spectroscopy has been studied. The results show that the stress induced by CoSi2 grown on the polycrystalline Si is compressive stress. Relations between the magnitude of the stress and the area of the CoSi2 films are studied. And it is found that smaller dimension of CoSi2 film causes larger stress, and the stress on the boundary of the CoSi2 patterns has contrary type to those at the center of the patterns and has twice absolute magnitude of that at the center of the patterns.

Original languageEnglish
Pages (from-to)299-303
Number of pages5
JournalPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume19
Issue number4
Publication statusPublished - 01 Dec 1998
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Stress induced by CoSi<sub>2</sub> grown on polycrystalline Si measured by micro-Raman spectroscopy'. Together they form a unique fingerprint.

Cite this