Structural and electrical characterizations of oxynitride films on solid phase epitaxially grown silicon carbide

L.K. Bera, W.K. Choi, David McNeill, S.K. Ray, S. Chatterjee, C.K. Maiti

Research output: Contribution to conferencePaper

Original languageEnglish
PagesH5.14.1-H5.14.6
Number of pages6
Publication statusPublished - Nov 2000
EventMRS Symposium Proceedings - San Francisco, United States
Duration: 01 Apr 200001 Apr 2000

Conference

ConferenceMRS Symposium Proceedings
CountryUnited States
CitySan Francisco
Period01/04/200001/04/2000

Cite this

Bera, L. K., Choi, W. K., McNeill, D., Ray, S. K., Chatterjee, S., & Maiti, C. K. (2000). Structural and electrical characterizations of oxynitride films on solid phase epitaxially grown silicon carbide. H5.14.1-H5.14.6. Paper presented at MRS Symposium Proceedings, San Francisco, United States.