Studies of switching kinetics in ferroelectric thin films

A.Q. Jiang, M. Dawber, J.F. Scott, C. Wang, P. Migliorato, Marty Gregg

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36 Citations (Scopus)

Abstract

Experimental studies are reported concerning the importance of interfacial capacitance (including electrode screening, space-charge layers, and/or chemically discrete dead layers). on domain switching behaviour in thin films of ferroelectric lead zirconate-titanate (PZT), strontium bismuth tantalate (SBT), and barium strontium titanate (BST). Emphasis is placed upon studies at applied field values very near the coercive field E, asymmetry in fatigue for positive and negative polarity coercive fields, and in the case of BST, of the coexistence of ferroelectric and paraelectric phases Studies of dielectric loss show important correlations between tan 6 and fatigue (polarization decrease) as a function of bipolar switching cycles N. This is a priori not obvious, since the former is a linear response and the latter, a nonlinear response. Modelling of enlarged interfacial,space-charge layers in PZT films and chemically distinct dead (paraelectric) layers in BST films shows contradictory tendencies of coercive-voltage changes with the growth of passive layers.
Original languageEnglish
Pages (from-to)6973-6982
Number of pages10
JournalJapanese Journal of Applied Physics
Volume42
Issue number11
DOIs
Publication statusPublished - Nov 2003

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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