Study of dislocations and stress in silicon-on-insulator tubs using transmission electron microscopy and finite element modelling

A.J. McMullan, D. O'Mahoney, W.A. Nevin, Anthony Paxton, Marty Gregg

Research output: Contribution to conferencePaper

Original languageEnglish
Pages39-48
Number of pages10
Publication statusPublished - Apr 2003
Event7th International Symposium on Semiconductor Wafer Bonding - Paris, France
Duration: 01 Apr 200301 Apr 2003

Conference

Conference7th International Symposium on Semiconductor Wafer Bonding
CountryFrance
CityParis
Period01/04/200301/04/2003

Bibliographical note

ISSN: 1-56677-402-0

Cite this

McMullan, A. J., O'Mahoney, D., Nevin, W. A., Paxton, A., & Gregg, M. (2003). Study of dislocations and stress in silicon-on-insulator tubs using transmission electron microscopy and finite element modelling. 39-48. Paper presented at 7th International Symposium on Semiconductor Wafer Bonding, Paris, France.