Study of dislocations and stress in silicon-on-insulator tubs using transmission electron microscopy and finite element modelling

Research output: Contribution to conference › Paper

Original language	English
Pages	39-48
Number of pages	10
Publication status	Published - Apr 2003
Event	7th International Symposium on Semiconductor Wafer Bonding - Paris, France Duration: 01 Apr 2003 → 01 Apr 2003

Conference	7th International Symposium on Semiconductor Wafer Bonding
Country/Territory	France
City	Paris
Period	01/04/2003 → 01/04/2003

ISSN: 1-56677-402-0

Cite this

@conference{6bf7785f0f074a8aa6c5695890336af3,

title = "Study of dislocations and stress in silicon-on-insulator tubs using transmission electron microscopy and finite element modelling",

author = "A.J. McMullan and D. O'Mahoney and W.A. Nevin and Anthony Paxton and Marty Gregg",

note = "ISSN: 1-56677-402-0; 7th International Symposium on Semiconductor Wafer Bonding ; Conference date: 01-04-2003 Through 01-04-2003",

year = "2003",

month = apr,

language = "English",

pages = "39--48",

}

TY - CONF

T1 - Study of dislocations and stress in silicon-on-insulator tubs using transmission electron microscopy and finite element modelling

AU - McMullan, A.J.

AU - O'Mahoney, D.

AU - Nevin, W.A.

AU - Paxton, Anthony

AU - Gregg, Marty

N1 - ISSN: 1-56677-402-0

PY - 2003/4

Y1 - 2003/4

UR - https://www.scopus.com/pages/publications/3042781021

M3 - Paper

SP - 39

EP - 48

T2 - 7th International Symposium on Semiconductor Wafer Bonding

Y2 - 1 April 2003 through 1 April 2003

ER -