SURFACE-MODE ENHANCED PHOTOCURRENT FROM PTSI/N-SI SCHOTTKY-BARRIER DETECTORS

A SELLAI*, PG MCCAFFERTY, P DAWSON, SH RAZA, HS GAMBLE

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Using the Otto geometry of attenuated total reflection (prism-air gap-sample), front illuminated PtSi/Si Schottky barrier detectors are shown to exhibit enhanced photocurrent at surface plasmon resonance in the near infrared region. Correlation of the measured photocurrent with the calculated transmittance of light into the Si substate is demonstrated. The transmittance, which is due to surface plasmon re-radiation, is the optical parameter of principal importance in photosignal generation since the photon energies used here are greater than the silicon intrinsic bandgap. The results presented here indicate clearly the important features in optimizing surface plasmon enhancement in photodetection both above and below the silicon absorption edge.

Original languageEnglish
Pages (from-to)65-70
Number of pages6
JournalInternational journal of optoelectronics
Volume9
Issue number1
Publication statusPublished - 1994

Keywords

  • TUNNEL-JUNCTIONS
  • PLASMON
  • PHOTODETECTION

Cite this

SELLAI, A., MCCAFFERTY, PG., DAWSON, P., RAZA, SH., & GAMBLE, HS. (1994). SURFACE-MODE ENHANCED PHOTOCURRENT FROM PTSI/N-SI SCHOTTKY-BARRIER DETECTORS. International journal of optoelectronics, 9(1), 65-70.
SELLAI, A ; MCCAFFERTY, PG ; DAWSON, P ; RAZA, SH ; GAMBLE, HS. / SURFACE-MODE ENHANCED PHOTOCURRENT FROM PTSI/N-SI SCHOTTKY-BARRIER DETECTORS. In: International journal of optoelectronics. 1994 ; Vol. 9, No. 1. pp. 65-70.
@article{367acf94831f4b449227f460577d7d2b,
title = "SURFACE-MODE ENHANCED PHOTOCURRENT FROM PTSI/N-SI SCHOTTKY-BARRIER DETECTORS",
abstract = "Using the Otto geometry of attenuated total reflection (prism-air gap-sample), front illuminated PtSi/Si Schottky barrier detectors are shown to exhibit enhanced photocurrent at surface plasmon resonance in the near infrared region. Correlation of the measured photocurrent with the calculated transmittance of light into the Si substate is demonstrated. The transmittance, which is due to surface plasmon re-radiation, is the optical parameter of principal importance in photosignal generation since the photon energies used here are greater than the silicon intrinsic bandgap. The results presented here indicate clearly the important features in optimizing surface plasmon enhancement in photodetection both above and below the silicon absorption edge.",
keywords = "TUNNEL-JUNCTIONS, PLASMON, PHOTODETECTION",
author = "A SELLAI and PG MCCAFFERTY and P DAWSON and SH RAZA and HS GAMBLE",
year = "1994",
language = "English",
volume = "9",
pages = "65--70",
journal = "International journal of optoelectronics",
issn = "0952-5432",
publisher = "Taylor and Francis Ltd.",
number = "1",

}

SELLAI, A, MCCAFFERTY, PG, DAWSON, P, RAZA, SH & GAMBLE, HS 1994, 'SURFACE-MODE ENHANCED PHOTOCURRENT FROM PTSI/N-SI SCHOTTKY-BARRIER DETECTORS', International journal of optoelectronics, vol. 9, no. 1, pp. 65-70.

SURFACE-MODE ENHANCED PHOTOCURRENT FROM PTSI/N-SI SCHOTTKY-BARRIER DETECTORS. / SELLAI, A; MCCAFFERTY, PG; DAWSON, P; RAZA, SH; GAMBLE, HS.

In: International journal of optoelectronics, Vol. 9, No. 1, 1994, p. 65-70.

Research output: Contribution to journalArticle

TY - JOUR

T1 - SURFACE-MODE ENHANCED PHOTOCURRENT FROM PTSI/N-SI SCHOTTKY-BARRIER DETECTORS

AU - SELLAI, A

AU - MCCAFFERTY, PG

AU - DAWSON, P

AU - RAZA, SH

AU - GAMBLE, HS

PY - 1994

Y1 - 1994

N2 - Using the Otto geometry of attenuated total reflection (prism-air gap-sample), front illuminated PtSi/Si Schottky barrier detectors are shown to exhibit enhanced photocurrent at surface plasmon resonance in the near infrared region. Correlation of the measured photocurrent with the calculated transmittance of light into the Si substate is demonstrated. The transmittance, which is due to surface plasmon re-radiation, is the optical parameter of principal importance in photosignal generation since the photon energies used here are greater than the silicon intrinsic bandgap. The results presented here indicate clearly the important features in optimizing surface plasmon enhancement in photodetection both above and below the silicon absorption edge.

AB - Using the Otto geometry of attenuated total reflection (prism-air gap-sample), front illuminated PtSi/Si Schottky barrier detectors are shown to exhibit enhanced photocurrent at surface plasmon resonance in the near infrared region. Correlation of the measured photocurrent with the calculated transmittance of light into the Si substate is demonstrated. The transmittance, which is due to surface plasmon re-radiation, is the optical parameter of principal importance in photosignal generation since the photon energies used here are greater than the silicon intrinsic bandgap. The results presented here indicate clearly the important features in optimizing surface plasmon enhancement in photodetection both above and below the silicon absorption edge.

KW - TUNNEL-JUNCTIONS

KW - PLASMON

KW - PHOTODETECTION

M3 - Article

VL - 9

SP - 65

EP - 70

JO - International journal of optoelectronics

JF - International journal of optoelectronics

SN - 0952-5432

IS - 1

ER -