Using the Otto geometry of attenuated total reflection (prism-air gap-sample), front illuminated PtSi/Si Schottky barrier detectors are shown to exhibit enhanced photocurrent at surface plasmon resonance in the near infrared region. Correlation of the measured photocurrent with the calculated transmittance of light into the Si substate is demonstrated. The transmittance, which is due to surface plasmon re-radiation, is the optical parameter of principal importance in photosignal generation since the photon energies used here are greater than the silicon intrinsic bandgap. The results presented here indicate clearly the important features in optimizing surface plasmon enhancement in photodetection both above and below the silicon absorption edge.
|Number of pages||6|
|Journal||International journal of optoelectronics|
|Publication status||Published - 1994|