Abstract
Demonstration of a tunable conductivity of the LaAlO3/SrTiO3 interfaces drew significant attention to the development of oxide electronic structures where electronic confinement can be reduced to the nanometer range. While the mechanisms for the conductivity modulation are quite different and include metal insulator phase transition and surface charge writing, generally it is implied that this effect is a result of electrical modification of the LaAlO3 surface (either due to electrochemical dissociation of surface adsorbates or free charge deposition) leading to the change in the two-dimensional electron. gas (2DEG) density at the LaAlO3/SrTiO3 (LAO/STO) interface. In this paper, using piezoresponse force microscopy we demonstrate a switchable electromechanical response of the LAO overlayer, which we attribute to the motion of oxygen vacancies through the LAO layer thickness. These electrically induced reversible changes in bulk stoichiometry of the LAO layer are a signature of a possible additional mechanism for nanoscale oxide 2DEG control on LAO/STO interfaces.
Original language | English |
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Pages (from-to) | 1765-1771 |
Number of pages | 7 |
Journal | Nano Letters |
Volume | 12 |
Issue number | 4 |
DOIs | |
Publication status | Published - 11 Apr 2012 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Bioengineering
- General Chemistry
- General Materials Science
- Mechanical Engineering