Switching dynamics in ferroelectric thin films: An experimental survey

D.J. Jung, M. Dawber, J.F. Scott, L.J. Sinnamon, Marty Gregg

Research output: Contribution to journalArticlepeer-review

44 Citations (Scopus)


We have conducted a broad survey of switching behavior in thin films of a range of ferroelectric materials, including some materials that are not typically considered for FeRAM applications, and are hence less studied. The materials studied include: strontium bismuth tantalate (SBT), barium strontium titanate (BST), lead zicronate titanate (PZT), and potassium nitrate (KNO3). Switching in ferroelectric thin films is typically considered to occur by domain nucleation and growth. We discuss two models of frequency dependence of coercive field, the Ishisbashi-Orihara theory where the limiting step is domain growth and the model of Du and Chen where the limiting step is nucleation. While both models fit the data fairly well the temperature dependence of our results on PZT and BST suggest that the nucleation model of Du and Chen is more appropriate for the experimental results that we have obtained.
Original languageEnglish
Pages (from-to)59-68
Number of pages10
JournalIntegrated Ferroelectrics
Publication statusPublished - 2002

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics

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