The effect of germane variation on microstructure in polycrystalline Si/SiGe thin films grown by rapid thermal chemical vapour deposition: fractal characterisation using scanning probe microscopy

P.A. Campbell, D.G. Walmsley, R.L.F. Chong, D.L. Gay, Harold Gamble, David McNeill

Research output: Contribution to journalArticle

LanguageEnglish
PagesS1067-S1071
Number of pages5
JournalApplied Physics A - Materials Science & Processing
Volume66(1-2)
Publication statusPublished - Mar 1998

Cite this

@article{7802ae6657a84619a5336ceada36dbea,
title = "The effect of germane variation on microstructure in polycrystalline Si/SiGe thin films grown by rapid thermal chemical vapour deposition: fractal characterisation using scanning probe microscopy",
author = "P.A. Campbell and D.G. Walmsley and R.L.F. Chong and D.L. Gay and Harold Gamble and David McNeill",
year = "1998",
month = "3",
language = "English",
volume = "66(1-2)",
pages = "S1067--S1071",
journal = "Applied Physics A-materials Science & Processing",
issn = "0947-8396",
publisher = "Springer Heidelberg",

}

TY - JOUR

T1 - The effect of germane variation on microstructure in polycrystalline Si/SiGe thin films grown by rapid thermal chemical vapour deposition: fractal characterisation using scanning probe microscopy

AU - Campbell, P.A.

AU - Walmsley, D.G.

AU - Chong, R.L.F.

AU - Gay, D.L.

AU - Gamble, Harold

AU - McNeill, David

PY - 1998/3

Y1 - 1998/3

M3 - Article

VL - 66(1-2)

SP - S1067-S1071

JO - Applied Physics A-materials Science & Processing

T2 - Applied Physics A-materials Science & Processing

JF - Applied Physics A-materials Science & Processing

SN - 0947-8396

ER -