The Influence of Point Defects and Inhomogeneous Strain on the Functional Behaviour of Thin film Ferroelectrics

L.W. Chang, M. McMillen, Marty Gregg

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

An attempt has been made to unequivocally identify the influence that inhomogeneous strain fields, surrounding point defects, have on the functional properties of thin film ferroelectrics. Single crystal thin film lamellae of BaTiO3 have been integrated into capacitor structures, and the functional differences between those annealed in oxygen and those annealed in nitrogen have been mapped. Key features, such as the change in the paraelectric-ferroelectric phase transition from first to second order were noted and found to be consistent with mean field modeling predictions for the effects of inhomogeneous strain. Switching characteristics appeared to be unaffected, suggesting that point defects have a low efficacy in domain wall pinning.
Original languageEnglish
Article number212905
Pages (from-to)212905-212905
Number of pages1
JournalApplied Physics Letters
Volume94
Issue number21
DOIs
Publication statusPublished - May 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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