Thin film sputtered silicon for silicon wafer bonding applications

Richard Hurley, Harold Gamble

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


The transfer of functional integrated circuit layers to other substrates is being investigated for smart-sensors, MEMS, 3-D ICs and mixed semiconductor circuits. There is a need for a planarisation and bondable layer which can be deposited at low temperature and which is IC compatible. This paper describes for the first time the successful use of sputtered silicon in this role for applications as outlined above where high temperature post bond anneals are not required. It also highlights the problems of using sputtered silicon as a bonding layer in applications where post bond temperatures greater than 400C are required.
Original languageEnglish
Pages (from-to)131-140
Number of pages10
Issue number2-3
Publication statusPublished - 10 Mar 2003

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces


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