Toward Self-Assembled Ferroelectric Random Access Memories: Hard-Wired Switching Capacitor Arrays with Almost Tb/in.2 Densities

Paul Evans, Xinhua Zhu, P. Baxter, M. McMillen, John McPhillips, F.D. Morrison, J.F. Scott, Robert Pollard, Robert Bowman, Marty Gregg

Research output: Contribution to journalArticle

61 Citations (Scopus)

Abstract

We report on the successful fabrication of arrays of switchable nanocapacitors made by harnessing the self-assembly of materials. The structures are composed of arrays of 20-40 nm diameter Pt nanowires, spaced 50-100 nm apart, electrodeposited through nanoporous alumina onto a thin film lower electrode on a silicon wafer. A thin film ferroelectric (both barium titanate (BTO) and lead zirconium titanate (PZT)) has been deposited on top of the nanowire array, followed by the deposition of thin film upper electrodes. The PZT nanocapacitors exhibit hysteresis loops with substantial remnant polarizations, while although the switching performance was inferior, the low-field characteristics of the BTO nanocapacitors show dielectric behavior comparable to conventional thin film heterostructures. While registration is not sufficient for commercial RAM production, this is nevertheless an embryonic form of the highest density hard-wired FRAM capacitor array reported to date and compares favorably with atomic force microscopy read-write densities.
Original languageEnglish
Pages (from-to)1134-1137
Number of pages4
JournalNano Letters
Volume7(5)
Issue number5
DOIs
Publication statusPublished - Apr 2007

ASJC Scopus subject areas

  • Chemistry (miscellaneous)
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials

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    Towards Self-Assembled Memory Architectures With Almost Tb/Inch2 Densities

    Robert Bowman (Contributor)

    2007

    Activity: Talk or presentation typesInvited talk

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