Tunable oxide-bypassed trench gate MOSFET: breaking the ideal superjunction MOSFET performance line at equal column width

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	704-706
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	24
Issue number	11
Publication status	Published - Nov 2003

ASJC Scopus subject areas

@article{02e48c1e2f444b689568368f9d59bbcd,

title = "Tunable oxide-bypassed trench gate MOSFET: breaking the ideal superjunction MOSFET performance line at equal column width",

author = "Xin Yang and Y.C. Liang and G.S. Samudra and Yong Liu",

year = "2003",

month = nov,

language = "English",

volume = "24",

pages = "704--706",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - Tunable oxide-bypassed trench gate MOSFET: breaking the ideal superjunction MOSFET performance line at equal column width

AU - Yang, Xin

AU - Liang, Y.C.

AU - Samudra, G.S.

AU - Liu, Yong

PY - 2003/11

Y1 - 2003/11

UR - https://www.scopus.com/pages/publications/0242662121

M3 - Article

SN - 0741-3106

VL - 24

SP - 704

EP - 706

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

ER -